型號 廠商 描述
jans1n4118d
2 3 4		 Microsemi Corporation Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
jans1n4119
2 3 4		 Microsemi Corporation Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
jans1n4119c
2 3 4		 Microsemi Corporation Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
jans1n4119cur-1
2 3 4		 MICROSEMI CORP Hex buffer/line driver (3-State) - Description: Hex Buffer/Line Driver; Non-Inverting (3-State) ; Logic switching levels: TTL ; Number of pins: 16 ; Output drive capability: +/- 8 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 9@3.3V ns; Voltage: 1.0-3.6 V
jans1n4119d
2 3 4		 Microsemi Corporation Hex buffer/line driver (3-State) - Description: Hex Buffer/Line Driver; Non-Inverting (3-State) ; Logic switching levels: TTL ; Number of pins: 16 ; Output drive capability: +/- 8 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 9@3.3V ns; Voltage: 1.0-3.6 V
jans1n4120
2 3 4		 Microsemi Corporation Hex buffer/line driver (3-State) - Description: Hex Buffer/Line Driver; Non-Inverting (3-State) ; Logic switching levels: TTL ; Number of pins: 16 ; Output drive capability: +/- 8 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 9@3.3V ns; Voltage: 1.0-3.6 V
jans1n4120c
2 3 4		 Microsemi Corporation Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
jans1n4120d
2 3 4		 Microsemi Corporation Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
jans1n4121
2 3 4		 Microsemi Corporation Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
jans1n4121c
2 3 4		 Microsemi Corporation Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
jans1n4121cur-1
2 3 4		 MICROSEMI CORP Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
jans1n4121d
2 3 4		 Microsemi Corporation Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
jans1n4121dur-1
2 3 4		 MICROSEMI CORP Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
jans1n4122
2 3 4		 Microsemi Corporation Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
jans1n4122c
2 3 4		 Microsemi Corporation Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
jans1n4122cur-1
2 3 4		 MICROSEMI CORP-LAWRENCE Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
jans1n4122d
2 3 4		 Microsemi Corporation Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
jans1n4122dur-1
2 3 4		 MICROSEMI CORP Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
jans1n4123
2 3 4		 Microsemi Corporation Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
jans1n4123c
2 3 4		 Microsemi Corporation Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
jans1n4123d
2 3 4		 Microsemi Corporation Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
jans1n4124
2 3 4		 Microsemi Corporation Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
jans1n4124c
2 3 4		 Microsemi Corporation Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
jans1n4124cur-1
2 3 4		 MICROSEMI CORP Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
jans1n4124d
2 3 4		 Microsemi Corporation Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
jans1n4124dur-1
2 3 4		 MICROSEMI CORP Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
jans1n4135d
2 3 4		 Microsemi Corporation Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
jans1n4135dur-1
2 3 4		 MICROSEMI CORP Quad 2-input exclusive-OR gate
jans1n4460
2 3 4		 MICROSEMI CORP Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
jans1n4461
2 3 4		 MICROSEMI CORP-SCOTTSDALE Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
jans1n4462
2 3 4		 MICROSEMI CORP-LAWRENCE surface mount silicon Zener diodes
jans1n4462us
2 3 4		 MICROSEMI CORP-SCOTTSDALE surface mount silicon Zener diodes
jans1n4463
2 3 4		 MICROSEMI CORP-SCOTTSDALE Quad 2-input NAND gate - Description: 3.3V Quad 2-Input NAND Gate ; Logic switching levels: TTL ; Number of pins: 14 ; Output drive capability: +/- 24 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 2.1@3.3V ns; Voltage: 1.2-3.6
jans1n4463us
2 3 4		 MICROSEMI CORP-SCOTTSDALE Quad 2-input NAND gate - Description: 3.3V Quad 2-Input NAND Gate ; Logic switching levels: TTL ; Number of pins: 14 ; Output drive capability: +/- 24 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 2.1@3.3V ns; Voltage: 1.2-3.6
jans1n4464
2 3 4		 MICROSEMI CORP Quad 2-input NOR gate - Description: 3.3V Quad 2-Input NOR Gate ; Logic switching levels: TTL ; Number of pins: 14 ; Output drive capability: +/- 24 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 2.1@3.3V ns; Voltage: 1.2-3.6
jans1n4464us
2 3 4		 MICROSEMI CORP-COLORADO Quad 2-input NOR gate - Description: 3.3V Quad 2-Input NOR Gate ; Logic switching levels: TTL ; Number of pins: 14 ; Output drive capability: +/- 24 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 2.1@3.3V ns; Voltage: 1.2-3.6
jans1n4465
2 3 4		 MICROSEMI CORP-SCOTTSDALE Quad 2-input NOR gate - Description: 3.3V Quad 2-Input NOR Gate ; Logic switching levels: TTL ; Number of pins: 14 ; Output drive capability: +/- 24 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 2.1@3.3V ns; Voltage: 1.2-3.6
jans1n4465us
2 3 4		 MICROSEMI CORP-IRELAND Quad 2-input NOR gate - Description: 3.3V Quad 2-Input NOR Gate ; Logic switching levels: TTL ; Number of pins: 14 ; Output drive capability: +/- 24 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 2.1@3.3V ns; Voltage: 1.2-3.6
jans1n4466
2 3 4		 MICROSEMI CORP-IRELAND surface mount silicon Zener diodes
jans1n4466us
2 3 4		 MICROSEMI CORP surface mount silicon Zener diodes
jans1n4467
2 3 4		 MICROSEMI CORP-SCOTTSDALE Hex inverter - Description: Hex Inverter ; Logic switching levels: TTL ; Output drive capability: +/- 24 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 2.1@3.3V ns; Voltage: 1.2-3.6
jans1n4467us
2 3 4		 MICROSEMI CORP-LAWRENCE surface mount silicon Zener diodes
jans1n4468
2 3 4		 MICROSEMI CORP-IRELAND surface mount silicon Zener diodes
jans1n4468us
2 3 4		 MICROSEMI CORP surface mount silicon Zener diodes
jans1n4469
2 3 4		 MICROSEMI CORP-SCOTTSDALE surface mount silicon Zener diodes
jans1n4469us
2 3 4		 MICROSEMI CORP-LAWRENCE surface mount silicon Zener diodes
jans1n4470
2 3 4		 MICROSEMI CORP-IRELAND surface mount silicon Zener diodes
jans1n4470us
2 3 4		 MICROSEMI CORP-LAWRENCE surface mount silicon Zener diodes
jans1n4471
2 3 4		 MICROSEMI CORP-IRELAND surface mount silicon Zener diodes
jans1n4471us
2 3 4		 MICROSEMI CORP-SCOTTSDALE Quad 2-input AND gate - Description: 3.3V Quad 2-Input AND Gate ; Logic switching levels: TTL ; Number of pins: 14 ; Output drive capability: +/- 24 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 2.1@ 3.3V ns; Voltage: 1.2-3.6