型號(hào) | 廠商 | 描述 |
jantx1n6055atr 2 3 4 |
MICROSEMI CORP-LAWRENCE | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
jantx1n6055tr 2 3 4 |
Microsemi Corporation | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
jantx1n6056 2 3 4 |
Microsemi Corporation | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
jantx1n6062 2 3 4 |
Microsemi Corporation | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
jantx1n6062a 2 3 4 |
MICROSEMI CORP-LAWRENCE | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
jantx1n6062atr 2 3 4 |
MICROSEMI CORP-LAWRENCE | Octal D-type flip-flop with 5 V tolerant inputs/outputs; positive edge-trigger; 3-state - Description: 3.3V D-Type Flip-Flop; Postive-Edge Trigger; 3-State ; F<sub>max</sub>: 100 MHz; Logic switching levels: TTL ; Output drive capability: +/- 24 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 2.7@3.3V ns; Voltage: 1.2-3.6 |
jantx1n6062tr 2 3 4 |
Microsemi Corporation | Octal D-type flip-flop with data enable; positive-edge trigger - Description: 3.3V Octal D-Type Flip-Flop with Data Enable; Positive-Edge Trigger ; F<sub>max</sub>: 230 MHz; Logic switching levels: TTL ; Output drive capability: +/- 24 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 6@3.3V ns; Voltage: 1.2-3.6 |
jantx1n6063 2 3 4 |
Microsemi Corporation | Octal D-type flip-flop with data enable; positive-edge trigger - Description: 3.3V Octal D-Type Flip-Flop with Data Enable; Positive-Edge Trigger ; F<sub>max</sub>: 230 MHz; Logic switching levels: TTL ; Output drive capability: +/- 24 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 6@3.3V ns; Voltage: 1.2-3.6 |
jantx1n6063a 2 3 4 |
MICROSEMI CORP-LAWRENCE | Octal D-type flip-flop with data enable; positive-edge trigger - Description: 3.3V Octal D-Type Flip-Flop with Data Enable; Positive-Edge Trigger ; F<sub>max</sub>: 230 MHz; Logic switching levels: TTL ; Output drive capability: +/- 24 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 6@3.3V ns; Voltage: 1.2-3.6 |
jantx1n6063atr 2 3 4 |
MICROSEMI CORP-LAWRENCE | Quad 2-input NAND gate (open drain) - Description: 3.3V Quad 2-Input NAND (Open Drain) ; Logic switching levels: TTL ; Number of pins: 14 ; Output drive capability: 24 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 2.2 @ 3.3V ns; Voltage: 1.2-3.6 |
jantx1n6063tr 2 3 4 |
Microsemi Corporation | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
jantx1n6064 2 3 4 |
Microsemi Corporation | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
jantx1n6064a 2 3 4 |
MICROSEMI CORP-SCOTTSDALE | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
jantx1n6064atr 2 3 4 |
MICROSEMI CORP-LAWRENCE | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
jantx1n6064tr 2 3 4 |
Microsemi Corporation | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
jantx1n6065 2 3 4 |
Microsemi Corporation | Triple inverter |
jantx1n6065a 2 3 4 |
MICROSEMI CORP-SCOTTSDALE | Triple inverter |
jantx1n6065atr 2 3 4 |
MICROSEMI CORP-LAWRENCE | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
jantx1n6065tr 2 3 4 |
Microsemi Corporation | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
jantx1n6066 2 3 4 |
Microsemi Corporation | Triple inverter with open-drain output |
jantx1n6066a 2 3 4 |
MICROSEMI CORP-SCOTTSDALE | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
jantx1n6066atr 2 3 4 |
MICROSEMI CORP-LAWRENCE | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
jantx1n6066tr 2 3 4 |
Microsemi Corporation | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
jantx1n6067 2 3 4 |
Microsemi Corporation | Triple buffer with open-drain output |
jantx1n6067a 2 3 4 |
MICROSEMI CORP-SCOTTSDALE | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
jantx1n6068 2 3 4 |
Microsemi Corporation | Triple inverting Schmitt trigger with 5 V tolerant input - Description: Triple Schmitt-Trigger Inverter ; Logic switching levels: TTL ; Number of pins: 8 ; Output drive capability: +/- 32 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 3.2@3.3V ns; Voltage: 1.65 - 5.5 |
jantx1n6485 2 3 4 |
MICROSEMI CORP-SCOTTSDALE | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) |
jantx1n6486 2 3 4 |
MICROSEMI CORP-LAWRENCE | Octal buffer/line driver with 5 V tolerant inputs/outputs (3-state) - Description: 3.3V Buffer/Line Driver (3-State) ; Logic switching levels: TTL ; Number of pins: 20 ; Output drive capability: +/- 24 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 3.3@3.3V ns; Voltage: 1.2-3.6 |
jantx1n6487 2 3 4 |
MICROSEMI CORP-LAWRENCE | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) |
jantx1n6488 2 3 4 |
MICROSEMI CORP-SCOTTSDALE | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) |
jantx1n6489 2 3 4 |
MICROSEMI CORP-SCOTTSDALE | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) |
jantx1n914 2 3 4 |
MICROSEMI CORP | SWITCHING DIODE |
jantx1n957a 2 3 4 |
MICROSEMI CORP-SCOTTSDALE | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) |
jantx1n957aur-1 2 3 4 |
Microsemi Corporation | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) |
jantx1n957b 2 3 4 |
MICROSEMI CORP-SCOTTSDALE | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) |
jantx1n957bur-1 2 3 4 |
MICROSEMI CORP-SCOTTSDALE | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) |
jantx1n957c 2 3 4 |
MICROSEMI CORP-SCOTTSDALE | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) |
jantx1n957d 2 3 4 |
MICROSEMI CORP-SCOTTSDALE | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) |
jans1n5349btr 2 3 4 |
Microsemi Corporation | surface mount silicon Zener diodes |
jans1n5349c 2 3 4 |
Microsemi Corporation | surface mount silicon Zener diodes |
jans1n5349ctr 2 3 4 |
Microsemi Corporation | surface mount silicon Zener diodes |
jans1n5349d 2 3 4 |
Microsemi Corporation | surface mount silicon Zener diodes |
jans1n5349dtr 2 3 4 |
Microsemi Corporation | surface mount silicon Zener diodes |
jans1n5349tr 2 3 4 |
Microsemi Corporation | surface mount silicon Zener diodes |
jans1n5350 2 3 4 |
Microsemi Corporation | surface mount silicon Zener diodes |
jans1n5350a 2 3 4 |
Microsemi Corporation | surface mount silicon Zener diodes |
jans1n5350atr 2 3 4 |
Microsemi Corporation | Ceramic Multilayer Capacitor; Capacitor Type:General Purpose; Capacitance:270pF; Capacitance Tolerance:+/- 1%; Voltage Rating:100VDC; Capacitor Dielectric Material:Multilayer Ceramic; Termination:SMD RoHS Compliant: Yes |
jans1n5350b 2 3 4 |
Microsemi Corporation | surface mount silicon Zener diodes |
jans1n5350btr 2 3 4 |
Microsemi Corporation | surface mount silicon Zener diodes |
jans1n5350c 2 3 4 |
Microsemi Corporation | Ceramic Multilayer Capacitor; Capacitor Type:General Purpose; Capacitance:270pF; Capacitance Tolerance:+/- 1%; Voltage Rating:50VDC; Capacitor Dielectric Material:Multilayer Ceramic; Termination:SMD RoHS Compliant: Yes |