| 型號(hào) | 廠商 | 描述 |
| fsl9130d1 2 3 4 5 6 7 8 |
INTERSIL CORP | CAPACITOR 820UF 200V ELECT TSHA |
| fsl9130d3 2 3 4 5 6 7 8 |
HARRIS SEMICONDUCTOR | CAP 1000UF 200V ELECT TS-HB |
| fsl9130r1 2 3 4 5 6 7 8 |
INTERSIL CORP | 5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| fsl9130r3 2 3 4 5 6 7 8 |
INTERSIL CORP | 5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| fsl9130r4 2 3 4 5 6 7 8 |
HARRIS SEMICONDUCTOR | 5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| fsl9130d 2 3 4 5 6 7 8 |
Intersil Corporation | 5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| fsl9130r 2 3 4 5 6 7 8 |
Intersil Corporation | 5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| fsl913a0r3 2 3 4 5 6 7 8 |
INTERSIL CORP | 7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| fsl913a0d1 2 3 4 5 6 7 8 |
INTERSIL CORP | 7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| fsl913a0d 2 3 4 5 6 7 8 |
Intersil Corporation | 7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| fsl913a0r 2 3 4 5 6 7 8 |
Intersil Corporation | 7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| fsl913a0r4 2 3 4 5 6 7 8 |
INTERSIL CORP | 7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| fsl913a0d3 2 3 4 5 6 7 8 |
INTERSIL CORP | 7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| fsl913a0r1 2 3 4 5 6 7 8 |
INTERSIL CORP | 7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| fsl9230d1 2 3 4 5 6 7 8 |
HARRIS SEMICONDUCTOR | 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| fsl9230r1 2 3 4 5 6 7 8 |
HARRIS SEMICONDUCTOR | 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| fsl9230r3 2 3 4 5 6 7 8 |
INTERSIL CORP | 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| fsl9230r4 2 3 4 5 6 7 8 |
INTERSIL CORP | 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| fsl9230d 2 3 4 5 6 7 8 |
Intersil Corporation | 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| fsl9230d3 2 3 4 5 6 7 8 |
HARRIS SEMICONDUCTOR | 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| fsl9230r 2 3 4 5 6 7 8 |
Intersil Corporation | 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs |
| fsl923a0r3 2 3 4 5 6 7 8 |
INTERSIL CORP | 5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
| fsl923a0d1 2 3 4 5 6 7 8 |
INTERSIL CORP | 5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
| fsl923a0d 2 3 4 5 6 7 8 |
Intersil Corporation | 5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
| fsl923a0r 2 3 4 5 6 7 8 |
Intersil Corporation | 5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
| fsl923a0r4 2 3 4 5 6 7 8 |
INTERSIL CORP | 5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
| fsl923a0d3 2 3 4 5 6 7 8 |
INTERSIL CORP | 5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
| fsl923a0r1 2 3 4 5 6 7 8 |
INTERSIL CORP | 5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs |
| fslu2520 |
TOKO Inc. | Wirewound Chip Inductors |
| fslu2520-r10j |
TOKO Inc. | Wirewound Chip Inductors |
| fslu2520-r10k |
TOKO INC | Wirewound Chip Inductors |
| fslu2520-r10m |
TOKO INC | Wirewound Chip Inductors |
| fslv16211 2 3 4 5 6 |
Fairchild Semiconductor Corporation | 24-Bit Bus Switch |
| fsm16c2 |
Electronic Theatre Controls, Inc. | FR08C |
| fsm16c4 |
Electronic Theatre Controls, Inc. | FR08C |
| fsm16c6 |
Electronic Theatre Controls, Inc. | FR08C |
| fsm30c2 |
Electronic Theatre Controls, Inc. | FR08C |
| fsm30c4 |
Electronic Theatre Controls, Inc. | FR08C |
| fsm30c6 |
Electronic Theatre Controls, Inc. | FR08C |
| fso-1d |
Kyocera Kinseki Corpotation | Ultra Low Jitter. |
| fso-2d |
Kyocera Kinseki Corpotation | C-MOS Output 3.3V. |
| fspj260f 2 3 4 5 6 7 8 |
Intersil Corporation | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N(xiāo)溝道MOS場(chǎng)效應(yīng)管) |
| fspj260r 2 3 4 5 6 7 8 |
Intersil Corporation | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N(xiāo)溝道MOS場(chǎng)效應(yīng)管) |
| fspj264f 2 3 4 5 6 7 8 |
Intersil Corporation | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N(xiāo)溝道MOS場(chǎng)效應(yīng)管) |
| fspj264r 2 3 4 5 6 7 8 |
Intersil Corporation | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗輻射N(xiāo)溝道MOS場(chǎng)效應(yīng)管) |
| fspl230d1 2 3 4 5 6 7 8 |
INTERSIL CORP | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| fspl230f 2 3 4 5 6 7 8 |
Intersil Corporation | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| fspl230f3 2 3 4 5 6 7 8 |
INTERSIL CORP | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| fspl230f4 2 3 4 5 6 7 8 |
INTERSIL CORP | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| fspl230r 2 3 4 5 6 7 8 |
Intersil Corporation | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |