參數(shù)資料
型號： DB102S-T
廠商： RECTRON LTD
元件分類： 橋式整流
中文描述： 1 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
封裝： ROHS COMPLIANT, PLASTIC, DB-S, 4 PIN
文件頁數(shù)： 1/3頁
文件大?。?/td> 30K
代理商： DB102S-T
SINGLE-PHASE GLASS PASSIVATED
VOLTAGE RANGE 50 to 1200 Volts CURRENT 1.0 Ampere
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
* Surge overload rating - 40 amperes peak
* Ideal for printed circuit board
* Reliable low cost construction utilizing molded
* Glass passivated device
* Polarity symbols molded on body
* Mounting position: Any
* Weight: 1.0 gram
* Epoxy : Device has UL flammability classification 94V-0
* UL listed the recognized component directory, file #E94233
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
DB101S
THRU
DB1012S
MAXIMUM RATINGS (At TA = 25
oC unless otherwise noted)
SILICON BRIDGE RECTIFIER
Dimensions in inches and (millimeters)
DB-S
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
SYMBOL
VRRM
VDC
IO
IFSM
VRMS
Volts
Amps
1.0
40
UNITS
Maximum Average Forward Output Current at TA = 40
oC
Volts
Amps
CHARACTERISTICS
MECHANICAL DATA
50
200
400
100
600
800
1000
35
140
280
70
420
560
700
DB101S
DB103S DB104S
DB102S
DB105S DB106S DB107S
50
200
400
100
600
800
1000
1200
840
DB1012S
1200
.255 (6.5)
.310 (7.9)
.290 (7.4)
.245 (6.2)
.042 (1.1)
.038 (1.0)
.013 (.330)
.009
.003 (.076)
.410 (10.4)
.060 (1.524)
.040 (1.016)
.360 (9.4)
(0.229)
.346 (8.8)
.307 (7.8)
.195 (5.0)
.205 (5.2)
.135 (3.4)
.115 (2.9)
ELECTRICAL CHARACTERISTICS (At TA = 25
oC unless otherwise noted)
NOTE: 1.Suffix “-s” Surface Mount for Dip Bridge.
2005-2
REV:A
Operating and Storage Temperature Range
TJ,TSTG
-55 to + 150
0 C
DC Blocking Voltage per element
VF
SYMBOL
IR
UNITS
1.1
0.5
mAmps
uAmps
Element at 1.0A DC
Maximum Forward Voltage Drop per Bridge
Volts
@TA = 25
oC
@TA = 125
oC
5.0
Maximum Reverse Current at rated
DB101S
DB103S DB104S
DB102S
DB105S DB106S DB107S DB1012S
0 C/ W
R
θ JA
40
R
θ JC
9
Typical Thermal Resistance
(Note 1)
2.Units mounted on P.C.B.with 0.5x0.5” (13x13mm) copper pads.
3. “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.
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PDF描述
DB107S-T
DB106S-T
DB1012S-T
DB13W3P543A00 13 CONTACT(S), MALE, D SUBMINIATURE CONNECTOR, SOLDER
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參數(shù)描述
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DB102ST-G 制造商:COMCHIP 制造商全稱:Comchip Technology 功能描述:SMD Glass Passivated Bridge Rectifiers
DB102S-T-S-NT 功能描述:橋式整流器 DIP,Bridge,SM,NT DB-S,1A,100V RoHS:否 制造商:Vishay 產(chǎn)品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續(xù)電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風(fēng)格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube
DB102S-T-S-NTC 功能描述:橋式整流器 1A 100V SM NT RoHS:否 制造商:Vishay 產(chǎn)品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續(xù)電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風(fēng)格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube
DB102S-T-S-NT-T 功能描述:橋式整流器 1A 100V SM NT RoHS:否 制造商:Vishay 產(chǎn)品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續(xù)電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風(fēng)格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube
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