Technische Information / Technical Information
Netz-Dioden-Modul
Rectifier Diode Module
DD B6U 145 N 12...18 (ISOPACK)
N
B6
Elektrische Eigenschaften / Electrical properties
Hchstzulssige Werte / Maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltage
T
vj
= - 40°C...T
vj max
V
RRM
1200, 1400
1600, 1800
V
V
Stospitzensperrspannung
non-repetitive peak reverse voltage
T
vj
= + 25°C...T
vj max
V
RSM
1300, 1500
1700, 1900
V
V
Durchlastrom-Grenzeffektivwert (pro Element)
RMS forward current (per chip)
I
FRMSM
100
A
Ausgangsstrom
output current
T
C
= 100°C
T
C
= 84°C
T
A
= 45°C, KM 11
T
A
= 45°C, KM 33
T
A
= 35°C, KM 14 (V
L
= 45l/s)
T
A
= 35°C, KM 33 (V
L
= 90l/s)
I
d
145
173
71
97
153
173
A
A
A
A
A
A
Stostrom-Grenzwert
surge forward current
T
vj
= 25°C, t
S
= 10ms
I
FSM
1200
1000
A
A
T
vj
= T
vj max
, t
p
= 10ms
Grenzlastintegral
I2t-value
T
vj
= 25°C, t
S
= 10ms
I2t
7200
5000
A2s
A2s
T
vj
= T
vj max
, t
p
= 10ms
Charakteristische Werte / Characteristic values
Durchlaspannung
forward voltage
T
vj
= T
vj max
, i
F
= 150A
v
F
max.
1,43
V
Schleusenspannung
threshold voltage
T
vj
= T
vj max
V
(TO)
0,75
V
Ersatzwiderstand
forward slope resistance
T
vj
= T
vj max
r
T
3,1
m
Sperrstrom
reverse current
T
vj
= T
vj max,
v
R =
V
RRM
i
R
max.
5
mA
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50Hz, t = 1min
V
ISOL
3,0
3,6
kV
kV
RMS, f = 50Hz, t = 1sec
Thermische Eigenschaften / Thermal properties
Innerer Wrmewiderstand
thermal resistance, junction to case
pro Modul / per module,
Θ
= 120°rect
pro Element / per chip,
Θ
= 120°rect
R
thJC
max. 0,148
max. 0,890
max. 0,167
max. 0,700
°C/W
°C/W
°C/W
°C/W
pro Modul / per module, DC
pro Element / per chip, DC
übergangs-Wrmewiderstand
thermal resistance, case to heatsink
pro Modul / per module
R
thCK
max. 0,033
max. 0,200
°C/W
°C/W
pro Element / per chip
Hchstzulssige Sperrschichttemperatur
max. junction temperature
T
vj max
150
°C
Betriebstemperatur
operating temperature
T
c op
- 40...+150
°C
Lagertemperatur
storage temperature
T
stg
- 40...+150
°C
MOD-E1; R. Jrke
09. Feb 99
A /99
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