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參數(shù)資料
| 型號(hào)： | DBDF200R12KE330 |
| 英文描述： | IGBT Module |
| 中文描述： | IGBT模塊 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 151K |
| 代理商： | DBDF200R12KE330 |
Technische Information / technical information
DF200R12KE3
IGBT-Module
IGBT-Modules
-
1,65
2,15
V
-
1,65
-
V
-
210
-
A
-
270
-
A
-
30
-
μC
-
56
-
μC
-
14
-
mJ
-
26
-
mJ
R
thJC
-
-
0,12
K/W
-
-
0,20
K/W
-
-
0,15
K/W
Anzugsdrehmoment, elektr. Anschlüsse
terminal connection torque
M
Nm
Anschlüsse / terminals M6
2,5
-
5,0
Ausschaltenergie pro Puls
reverse recovery energy
I
F
=300A, -di
F
/dt= 3000A/μs
E
rec
V
R
= 600V, V
GE
= -15V, T
vj
= 25°C
V
R
= 600V, V
GE
= -15V, T
vj
= 125°C
Sperrverzgerungsladung
recovered charge
I
F
=300A, -di
F
/dt= 3000A/μs
Q
r
V
R
= 600V, V
GE
= -15V, T
vj
= 25°C
V
R
= 600V, V
GE
= -15V, T
vj
= 125°C
V
F
forward voltage
I
F
= 300A, V
GE
= 0V, T
vj
= 125°C
Rückstromspitze
peak reverse recovery current
I
F
=300A, -di
F
/dt= 3000A/μs
I
RM
V
R
= 600V, V
GE
= -15V, T
vj
= 25°C
V
R
= 600V, V
GE
= -15V, T
vj
= 125°C
Charakteristische Werte / characteristic values
Chopperdiode / chopper diode
Durchlassspannung
I
F
= 300A, V
GE
= 0V, T
vj
= 25°C
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften
zugesichert. Sie gilt in Verbindung mit den zugehrigen technischen Erluterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is valid with
the belonging technical notes.
Innere Isolation
internal insulation
case, see appendix
3,0
340
g
weight
G
Gewicht
comperative tracking index
Anzugsdrehmoment, mech. Befestigung
mounting torque
M
CTI
Schraube M6 / screw M6
Mechanische Eigenschaften / mechanical properties
425
storage temperature
Gehuse, siehe Anlage
125
°C
-
0,01
-
-
-
150
-40
-
K/W
°C
-
Al
2
O
3
maximum junction temperature
Betriebstemperatur
operation temperature
Transistor Wechelr. / transistor inverter
Inversdiode / free wheel diode
Innerer Wrmewiderstand; DC
thermal resistance, junction to case; DC
pro Modul / per module
λ
Paste
= 1W/m*K /
λ
grease
= 1W/m*K
T
stg
Lagertemperatur
6,0
Nm
°C
-40
-
125
Thermische Eigenschaften / thermal properties
T
vj max
T
vj op
Hchstzulssige Sperrschichttemp.
Chopper Diode / chopper diode
R
thCK
thermal resistance, case to heatsink
übergangs Wrmewiderstand
3 (8)
DB_DF200R12KE3_3.0
2002-10-07
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