參數(shù)資料
型號: DBDF300R12KE330
英文描述: IGBT Module
中文描述: IGBT模塊
文件頁數(shù): 3/8頁
文件大?。?/td> 152K
代理商: DBDF300R12KE330
Technische Information / technical information
DF300R12KE3
IGBT-Module
IGBT-Modules
-
1,65
2,15
V
-
1,65
-
V
-
280
-
A
-
360
-
A
-
40
-
μC
-
75
-
μC
-
18
-
mJ
-
34
-
mJ
-
-
0,085
K/W
-
-
0,150
K/W
-
-
0,125
K/W
Anzugsdrehmoment, elektr. Anschlüsse
terminal connection torque
M
Nm
2,5
-
5,0
Anschlüsse /terminals M6
Thermische Eigenschaften / thermal properties
R
thCK
K/W
T
vj max
Lagertemperatur
storage temperature
operation temperature
T
vj op
T
stg
-
Nm
°C
-40
-
125
-
Al
2
O
3
-
0,010
R
thJC
°C
maximum junction temperature
Betriebstemperatur
-40
-
125
°C
150
-
Gehuse, siehe Anlage
case, see appendix
comperative tracking index
internal insulation
M
mounting torque
CTI
Schraube M6 / screw M6
6,0
g
weight
G
Gewicht
3,0
Anzugsdrehmoment, mech. Befestigung
pro Modul / per module
λ
Paste
= 1W/m*K /
λ
grease
= 1W/m*K
Ausschaltenergie pro Puls
reverse recovery energy
I
F
=400A, -di
F
/dt= 4000A/μs
V
R
= 600V, V
GE
= -15V, T
vj
= 125°C
Transistor Wechelr. / transistor inverter
Inversdiode / free wheel diode
I
F
=400A, -di
F
/dt= 4000A/μs
Innerer Wrmewiderstand; DC
thermal resistance, junction to case; DC
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften
zugesichert. Sie gilt in Verbindung mit den zugehrigen technischen Erluterungen.
I
RM
V
R
= 600V, V
GE
= -15V, T
vj
= 25°C
V
R
= 600V, V
GE
= -15V, T
vj
= 125°C
V
R
= 600V, V
GE
= -15V, T
vj
= 25°C
Q
r
Mechanische Eigenschaften / mechanical properties
Sperrverzgerungsladung
recovered charge
übergangs Wrmewiderstand
thermal resistance, case to heatsink
This technical information specifies semiconductor devices but promises no characteristics. It is valid with
the belonging technical notes.
Innere Isolation
340
425
Chopperdiode / chopper diode
Durchlassspannung
forward voltage
I
F
=400A, V
GE
= 0V, T
vj
= 25°C
V
F
I
F
= 400A, V
GE
= 0V, T
vj
= 125°C
-
E
rec
Rückstromspitze
peak reverse recovery current
I
F
=400A, -di
F
/dt= 4000A/μs
Hchstzulssige Sperrschichttemp.
V
R
= 600V, V
GE
= -15V, T
vj
= 25°C
V
R
= 600V, V
GE
= -15V, T
vj
= 125°C
Chopper Diode / chopper diode
Charakteristische Werte / characteristic values
3 (8)
DB_DF300R12KE3_3.0
2002-10-02
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