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參數(shù)資料
| 型號： | DBFZ800R12KE320 |
| 英文描述： | IGBT Module |
| 中文描述： | IGBT模塊 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 234K |
| 代理商： | DBFZ800R12KE320 |
2
Technische Information / technical information
FZ800R12KE3
IGBT-Module
IGBT-modules
prepared by: Martin Knecht
approved by: Wilhelm Rusche
date of publication: 2003-8-26
revision: 2.0
Vorlufige Daten
preliminary data
Diode-Wechselrichter / diode-inverter
Hchstzulssige Werte / maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltage
TY = 25°C
V￠
1200
V
Dauergleichstrom
DC forward current
I
800
A
Periodischer Spitzenstrom
repetitive peak forward current
t = 1 ms
I￠
1600
A
Grenzlastintegral
I2t - value
V = 0 V, t = 10 ms, TY = 125°C
I2t
75000
A2s
Charakteristische Werte / characteristic values
min.
typ.
2,20
1,90
max.
2,75
Durchlassspannung
forward voltage
I = 800 A, V = 0 V, TY = 25°C
I = 800 A, V = 0 V, TY = 125°C
V
V
V
Rückstromspitze
peak reverse recovery current
I = 800 A, - di/dt = 3800 A/μs
V = 600 V, V = -15 V, TY = 25°C
V = 600 V, V = -15 V, TY = 125°C
I￠
300
450
A
A
Sperrverzgerungsladung
recovered charge
I = 800 A, -di/dt = 3800 A/μs
V = 600 V, V = -15 V, TY = 25°C
V = 600 V, V = -15 V, TY = 125°C
Q
35,0
95,0
μC
μC
Abschaltenergie pro Puls
reverse recovery energy
I = 800 A, -di/dt = 3800 A/μs
V = 600 V, V = -15 V, TY = 25°C
V = 600 V, V = -15 V, TY = 125°C
Etê
13,0
38,0
mJ
mJ
Innerer Wrmewiderstand
thermal resistance, junction to case
pro Diode
per diode
Rúì
0,06
K/W
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