參數(shù)資料
型號(hào): DBFZ800R12KL4CV
英文描述: IGBT Module
中文描述: IGBT模塊
文件頁(yè)數(shù): 5/7頁(yè)
文件大?。?/td> 234K
代理商: DBFZ800R12KL4CV
5
Technische Information / technical information
FZ800R12KE3
IGBT-Module
IGBT-modules
prepared by: Martin Knecht
approved by: Wilhelm Rusche
date of publication: 2003-8-26
revision: 2.0
Vorlufige Daten
preliminary data
Schaltverluste IGBT-Wechselr. (typisch)
switching losses IGBT-Inverter (typical)
Eóò = f (R), Eó = f (R)
V = ±15 V, I = 800 A, V = 600 V, TY = 125°C
R []
E
0
4
8
12
16
20
24
28
32
36
1000
900
800
700
600
500
400
300
200
100
0
Eóò
Transienter Wrmewiderstand IGBT-Wechselr.
transient thermal impedance IGBT-inverter
Zúì = f (t)
t [s]
Z
0,001
0,01
0,1
1
10
0,001
0,01
0,1
Zúì : IGBT
i:
rí[K/W]:
í[s]:
τ
1
0,00067
0,00001187
2
0,002
0,002364
3
0,01763
0,02601
4
0,0147
0,06499
Sicherer Rückwrts-Arbeitsbereich IGBT-Wr. (RBSOA)
reverse bias safe operating area IGBT-inv. (RBSOA)
I = f (V)
V = ±15 V, Ró = 0,91 , TY = 125°C
V [V]
I
0
200
400
600
800
1000
1200
1400
1800
1600
1400
1200
1000
800
600
400
200
0
I, Modul
I, Chip
Durchlakennlinie der Diode-Wechselr. (typisch)
forward characteristic of diode-inverter (typical)
I = f (V)
V [V]
I
0,0
0,4
0,8
1,2
1,6
2,0
2,4
2,8
3,2
1600
1400
1200
1000
800
600
400
200
0
TY = 25°C
TY = 125°C
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