- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄376574 > DBFZ800R33KF2V IGBT Module PDF資料下載
參數(shù)資料
| 型號： | DBFZ800R33KF2V |
| 英文描述： | IGBT Module |
| 中文描述： | IGBT模塊 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 234K |
| 代理商： | DBFZ800R33KF2V |
4
Technische Information / technical information
FZ800R12KE3
IGBT-Module
IGBT-modules
prepared by: Martin Knecht
approved by: Wilhelm Rusche
date of publication: 2003-8-26
revision: 2.0
Vorlufige Daten
preliminary data
Ausgangskennlinie IGBT-Wechselr. (typisch)
output characteristic IGBT-inverter (typical)
I = f (V)
V = 15 V
V [V]
I
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
1600
1400
1200
1000
800
600
400
200
0
TY = 25°C
TY = 125°C
Ausgangskennlinienfeld IGBT-Wechselr. (typisch)
output characteristic IGBT-inverter (typical)
I = f (V)
TY = 125°C
V [V]
I
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
1600
1400
1200
1000
800
600
400
200
0
V = 19V
V = 17V
V = 15V
V = 13V
V = 11V
V = 9V
übertragungscharakteristik IGBT-Wechselr. (typisch)
transfer characteristic IGBT-inverter (typical)
I = f (V)
V = 20 V
V [V]
I
5
6
7
8
9
10
11
12
1600
1400
1200
1000
800
600
400
200
0
TY = 25°C
TY = 125°C
Schaltverluste IGBT-Wechselr. (typisch)
switching losses IGBT-inverter (typical)
Eóò = f (I), Eó = f (I)
V = ±15 V, Róò = 3,6 , Ró = 0,91 , V = 600 V,
TY = 125°C
I [A]
E
0
200
400
600
800
1000 1200 1400 1600
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
Eóò
Eó
相關PDF資料 |
PDF描述 |
|---|---|
| DBG150G | Diffused Junction Silicon Diode 15A Single-Phase Bridge Rectifier |
| DBG250G | Diffused Junction Silicon Diode 25A Single-Phase Bridge Rectifier |
| DBL1026 | PLL FM STEREO MULTIPLEX |
| DBL1032D | 20W BRIDGE AMPLIFIER |
| DBL1045 | 10 A SPST / 8 A DPST POLARIZED SUBMINIATURE POWER RELAY |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| DBG | 制造商:Schneider Electric 功能描述:480/277V DIAGNOSTIC PCB - Bulk |
| DBG-102EF | 制造商:Alpha 3 Manufacturing 功能描述: |
| DBG-102LTF | 制造商:Alpha 3 Manufacturing 功能描述: |
| DBG-103EF | 制造商:Alpha 3 Manufacturing 功能描述: |
| DBG-103LTF | 制造商:Alpha 3 Manufacturing 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。