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參數(shù)資料
| 型號： | DCR1374SBA12 |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 晶閘管 |
| 英文描述： | Phase Control Thyristor |
| 中文描述： | 4230 A, 1200 V, SCR |
| 封裝： | L, 4 PIN |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 109K |
| 代理商： | DCR1374SBA12 |
DCR1374SBA
6/9
www.dynexsemi.com
Fig.4 Stored charge
Fig.5 Gate characteristics
0.1
1.0
10
100
Rate of decay of on-state current dI/dt - (A/μs)
10000
1000
100
T
S
Conditions:
T
j
= 125
C
I
T
= 800A
V
= 100V
t
p
= 1ms - Trapezoidal
I
RR
Q
S
I
T
dI/dt
10
1
0.1
0.01
0.001
Gate trigger current I
GT
- (A)
100
10
1
0.1
G
G
V
GD
Table gives pulse power P
GM
in Watts
Pulse width
μs
100
200
500
1ms
10ms
20
5100W
20W
10W
Region of certain
triggering
Upper limit 95%
Lower limit 5%
T
j
C
T
j
C
T
j
–
4
C
50
150
150
150
150
100
150
150
150
100
-
400
150
125
100
25
-
Pulse frequency Hz
Fig.7 Maximum (limit) transient thermal impedance -
junction to case (C/W)
Fig.6 Surge (non-repetitive) on-state current vs time (with
50% V
RRM
at T
case
125C)
100
75
50
25
0
P
1
10
1
2
3 45
50
ms
Cycles at 50Hz
Duration
3
4
5
6
I
2
t
2
s
6
)
I
2
t
I
2
t =
2
x t
2
7
8
10
20 30
10
1
0.1
0.01
0.001
Time - (s)
0.1
0.01
0.001
0.0001
T
C
Conduction
d.c.
Halfwave
3 phase 120
6 phase 60
Effective thermal resistance
Junction to case
C/W
Double side
0.0130
0.0141
0.0170
0.0200
Anode side
0.0210
0.0221
0.0250
0.0280
Double side cooled
100
Anode side cooled
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DCR1374SBA1212 | 制造商:Dynex Semiconductor 功能描述:SCR - PHASE CONTROL THYRISTOR |
| DCR1374SBA1313 | 制造商:n/a 功能描述:Power SCR |
| DCR1374SBA14 | 制造商:DYNEX 制造商全稱:Dynex Semiconductor 功能描述:Phase Control Thyristor |
| DCR1374SBA1414 | 制造商:Dynex Semiconductor 功能描述:SCR - PHASE CONTROL THYRISTOR |
| DCR1374SBA1515 | 制造商:n/a 功能描述:Power SCR |
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