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參數(shù)資料
| 型號： | DD171N12K-K |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 171 A, 1200 V, SILICON, RECTIFIER DIODE |
| 封裝： | MODULE-3 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 238K |
| 代理商： | DD171N12K-K |
N
Netz-Dioden-Modul
Rectifier Diode Module
Datenblatt / Data sheet
DD171N
BIP AC / 88-01-18, Spec
A17/88
1/9
Seite/page
Kenndaten
Elektrische Eigenschaften
Thermische Eigenschaften
DD171N
DD171N..K..-A
DD171N..K..-K
ND171N
Elektrische Eigenschaften / Electrical properties
Hchstzulssige Werte / Maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltages
Tvj = -40°C... Tvj max
VRRM
1200
1600
1400
1800
V
Stospitzensperrspannung
non-repetitive peak reverse voltage
Tvj = +25°C... Tvj max
VRSM
1300
1700
1500
1900
V
Durchlastrom-Grenzeffektivwert
maximum RMS on-state current
IFRMSM
270 A
Dauergrenzstrom
average on-state current
TC = 100°C
IFAVM
171 A
Stostrom-Grenzwert
surge current
Tvj = 25 °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
IFSM
6.600
5.600
A
Grenzlastintegral
It-value
Tvj = 25 °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
It
218.000
157.000
As
Charakteristische Werte / Characteristic values
Durchlaspannung
on-state voltage
Tvj = Tvj max , iF = 500 A
vF
max.
1,26 V
Schleusenspannung
threshold voltage
Tvj = Tvj max
V(TO)
0,75 V
Ersatzwiderstand
slope resistance
Tvj = Tvj max
rT
0,8 m
Sperrstrom
reverse current
Tvj = Tvj max , vR = VRRM
iR
max.
20 mA
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 sec
RMS, f = 50 Hz, t = 1 min
VISOL
3,0
2,5
kV
Thermische Eigenschaften / Thermal properties
Innerer Wrmewiderstand
thermal resistance, junction to case
pro Modul / per Module, Θ = 180° sin
pro Zweig / per arm, Θ = 180° sin
pro Modul / per Module, DC
pro Zweig / per arm, DC
RthJC
max.
0,130
0,260
0,126
0,252
°C/W
bergangs-Wrmewiderstand
thermal resistance, case to heatsink
pro Modul / per Module
pro Zweig / per arm
RthCH
max.
0,03
0,06
°C/W
Hchstzulssige Sperrschichttemperatur
maximum junction temperature
Tvj max
150 °C
Betriebstemperatur
operating temperature
Tc op
- 40...+150 °C
Lagertemperatur
storage temperature
Tstg
- 40...+150 °C
prepared by: C. Drilling
date of publication: 30.04.03
approved by: J. Novotny
revision:
1
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