參數(shù)資料
型號(hào): DDB-KJS-L2
廠商: DOMINANT Opto Technologies Sdn Bhd.
英文描述: LED GaN
中文描述: 氮化鎵發(fā)光二極管
文件頁數(shù): 3/12頁
文件大?。?/td> 783K
代理商: DDB-KJS-L2
Unit
Absolute Maximum Ratings
Maximum Value
DC forward current
Peak pulse current; (tp ≤ 10μs, Duty cycle = 0.005)
Reverse voltage (IR = 10 μA)
ESD threshold (HBM)
LED junction temperature
Operating temperature
Storage temperature
Power dissipation (at room temperature)
Thermal resistance
- Junction / ambient, R
th JA
- Junction / solder point, R
th JS
(Mounting on FR4 PCB, pad size >= 16 mm
2 per pad)
20
200
5
2000
125
-40 … +100
-40 … +100
85
500
280
mA
mA
V
V
C
C
C
mW
K/W
K/W
GaN : DDx-KJS-I1
DOMINANT
Semiconductors
Innovating Illumination
TM
27/06/2007 V(O)
3
Unit
Characteristics (Ta = 25C)
Value
Temperature coefficient of
I
F
= 10mA; 0
C <= T <= 100 C
Temperature coefficient of V
F (typ)
I
F
= 10mA; 0
C <= T <= 100 C
Temperature coefficient of I
V (typ)
I
F
= 10mA; 0
C <= T <= 100 C
nm / K
Symbol
O
dom (typ)
O
dom (typ)
TC
0.01
TC
V
-2.60
mV / K
TC
IV
-0.30
mcd / K
DDB-KJS
Part Number
DDB-KJS
DDB-KJS
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