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參數(shù)資料
| 型號(hào)： | DDO-GJS-M1 |
| 廠商： | DOMINANT Opto Technologies Sdn Bhd. |
| 英文描述： | LED GaP |
| 中文描述： | 發(fā)光二極管鎵 |
| 文件頁(yè)數(shù)： | 4/13頁(yè) |
| 文件大小： | 773K |
| 代理商： | DDO-GJS-M1 |
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06/09/2005 V4.0
4
Forward Voltage (V)
Vf Binning (Optional)
Vf Bin @ 20mA
01
02
03
04
1.55 … 1.85
1.85 … 2.15
2.15 … 2.45
2.45 … 2.75
Forward voltage, Vf is measured with an accuracy of ± 0.1 V.
Please consult sales and marketing for special part number to incorporate Vf bining.
Unit
Absolute Maximum Ratings
Maximum Value
DC forward current
Peak pulse current; (tp ≤ 10μs, Duty cycle = 0.005)
Reverse voltage
ESD Thereshold (HBM)
LED juction temperature
Operating temperature
Storage temperature
Power dissipation (at room temperature)
30
500
5
2
100
-40 … +100
-40 … +100
75
mA
mA
V
kV
C
C
C
mW
Gap : DDx-GJS
DOMINANT
Semiconductors
Innovating Illumination
TM
Typ. (V)
Vf @ If = 20mA
Forward voltage, Vf is measured with an accuracy of ± 0.1 V.
Electrical Characteristics at Ta=25C
Max. (V)
V
r @
I
r
= 10
μ
A
Min(V)
Chip Type
GaP
2.2
2.6
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