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參數資料
| 型號： | DDTA144ELP |
| 廠商： | Diodes Inc. |
| 英文描述： | PRE-BIASED (R1=R2) SMALL SIGNALSURFACE MOUNT 100mA PNP TRANSISTOR |
| 中文描述： | 預偏置（右\u003d R2的）小SIGNALSURFACE貼裝100mA的PNP晶體管 |
| 文件頁數： | 2/5頁 |
| 文件大?。?/td> | 173K |
| 代理商： | DDTA144ELP |
DS30844 Rev. 3 - 2
2 of 5
www.diodes.com
DDTA144ELP
Diodes Incorporated
N
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Off Characteristics (Note 4)
Collector-Base Breakdown Voltage
V
(BR)CBO
-50
V
I
C
= -10
μ
A, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
-50
V
I
C
= -1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage*
V
(BR)EBO
-4.5
V
I
E
= -50
μ
A, I
C
= 0
Collector Cutoff Current*
I
CEX
-0.5
μ
A
V
CE
= -50V, V
EB(OFF)
= 3.0V
Base Cutoff Current (I
BEX
)
I
BL
-0.5
μ
A
V
CE
= -50V, V
EB(OFF)
= 3.0V
Collector-Base Cut Off Current
I
CBO
-0.5
μ
A
V
CB
= -50V, I
E
= 0
Collector-Emitter Cut Off Current, I
O(OFF)
I
CEO
-0.5
μ
A
V
CE
= -50V, I
B
= 0
Emitter-Base Cut Off Current
I
EBO
-0.5
mA
V
EB
= 4V, I
C
= 0
Input Off Voltage
V
I(OFF)
-0.3
V
V
CC
= -5V, I
O
= -100uA
On Characteristics (Note 4)
-0.69
V
V
CE
= -5V, I
C
= -2mA
Base-Emitter Turn-On Voltage*
V
BE(ON)
-0.78
V
V
CE
= -5V, I
C
= -10mA
-0.88
V
I
C
= -10mA, I
B
= -1mA, V
CE
= -5V
Base-Emitter Saturation Voltage*
V
BE(SAT)
-0.98
V
I
C
= -50mA, I
B
= -5mA, V
CE
= -5V
Input-On Voltage
V
I(ON)
-3
V
V
O
= -0.3V, I
O
= -20mA
Input Current
I
I
-7.2
mA
V
I
= -5V
90
V
CE
=-5V, I
C
= -2mA
120
V
CE
= -5V, I
C
= -5mA
150
V
CE
= -5V, I
C
= -10mA
100
V
CE
= -5V, I
C
= -100mA
180
V
CE
= -5V, I
C
= -200mA
DC Current Gain
h
FE
250
V
CE
= -5V, I
C
= -300mA
-0.15
V
I
B
= -1mA, I
C
= -10mA
Collector-Emitter Saturation Voltage*
V
CE(SAT)
-0.85
V
I
B
= -5mA, I
C
= -50mA
Output On Voltage (Same as V
CE(SAT)
)
V
O(ON)
-0.3
V
I
I
= -0.5mA, I
O
= -50mA
Input Resistance
R1
1.54
2.2
2.86
K
Ω
Resistance Ratio
(R2/R1)
17
21
26
Small Signal Characteristics
Current Gain-Bandwidth Product
f
T
250
MHz
V
CE
= -10V, I
E
= -5mA, f = 100 MHz
* Guaranteed by design.
Notes:
4. Short duration test pulse used to minimize self-heating effect.
Pulse Test: Pulse width tp
<
300 uS, Duty Cycle, d
<
=2%.
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