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參數(shù)資料
| 型號： | DE150-102N02A |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching RF Power MOSFET |
| 中文描述： | N溝道增強模式雪崩額定低Qg和RG高dv / dt的納秒級射頻功率MOSFET開關 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 77K |
| 代理商： | DE150-102N02A |
DE150-102N02A
RF Power MOSFET
Directed Energy, Inc.
An
IXYS Company
Preliminary Data Sheet
VDSS
=
1000 V
ID25
=
1.5 A
RDS(on)
=
11
PDHS
=
80W
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
1000
V
VDGR
TJ = 25°C to 150°C; RGS = 1 M
1000
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
Tc = 25°C
1.5
A
IDM
Tc = 25°C, pulse width limited by TJM
9
A
IAR
Tc = 25°C
1.5
A
EAR
Tc = 25°C
6
mJ
IS
≤ IDM, di/dt ≤ 100A/s, VDD ≤ VDSS,
Tj
≤ 150°C, RG = 0.2
3
V/ns
IS = 0
>200
V/ns
PDHS
Tc = 25°C
Derate 4.4W/°C above 25°C
80
W
PDAMB
Tc = 25°C
3.5
W
TJ
-55…+150
°C
TJM
150
°C
Tstg
-55…+150
°C
TL
1.6mm (0.063 in) from case for 10 s
300
°C
Weight
2
g
dv/dt
Symbol
Test Conditions
Characteristic Values
TJ = 25°C unless otherwise specified
min.
typ.
max.
VDSS
VGS = 0 V, ID = 3 ma
1000
V
VGS(th)
VDS = VGS, ID = 4 ma
2.5
4.5
V
IGSS
VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = 0.8 VDSS TJ = 25°C
VGS = 0
TJ = 125°C
50
500
A
RDS(on)
11
gfs
VDS = 15 V, ID = 0.5ID25, pulse test
0.8
1.5
S
VGS = 15 V, ID = 0.5ID25
Pulse test, t
≤ 300S, duty cycle d ≤ 2%
Features
Isolated Substrate
high isolation voltage (>2500V)
excellent thermal transfer
Increased temperature and power
cycling capability
IXYS advanced low Qg process
Low gate charge and capacitances
easier to drive
faster switching
Low RDS(on)
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
Advantages
Optimized for RF and high speed
switching at frequencies to >100MHz
Easy to mount—no insulators needed
High power density
N-Channel Enhancement Mode
Avalanche Rated
Low Qg and Rg
High dv/dt
Nanosecond Switching
DRAIN
SG1
SG2
GATE
SD1
SD2
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| DE150-201N09-00 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 9A I(D) |
| DE150-201N09A | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:RF Power MOSFET |
| DE150-501N04-00 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 4.5A I(D) |
| DE-150-501N04A | 制造商:IXYS Corporation 功能描述:Trans MOSFET N-CH 500V 4.5A 6-Pin |
| DE150-501N04A | 制造商:IXYS Corporation 功能描述:MOSFET N RF DE150 制造商:IXYS Corporation 功能描述:MOSFET, N, RF, DE150 制造商:IXYS Corporation 功能描述:MOSFET, N, RF, 500V, DE150; Transistor Type:RF MOSFET; Drain Source Voltage Vds:500V; Continuous Drain Current Id:4.5A; Power Dissipation Pd:200W; Operating Temperature Min:-55C; Operating Temperature Max:175C; No. of Pins:6 ;RoHS Compliant: Yes |
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