參數(shù)資料
型號: DE375-102N10A
廠商: IXYS CORP
元件分類: 功率晶體管
英文描述: RF Power MOSFET
中文描述: VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
文件頁數(shù): 1/3頁
文件大小: 157K
代理商: DE375-102N10A
DE375-102N10A
RF Power MOSFET
V
DSS
I
D25
R
DS(on)
P
DC
= 1000 V
=
=
1.2
=
940 W
10 A
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25°C to 150°C
1000
V
V
DGR
T
J
= 25°C to 150°C; R
GS
= 1 M
1000
V
V
GS
Continuous
±20
V
V
GSM
Transient
±30
V
I
D25
T
c
= 25°C
10
A
I
DM
T
c
= 25°C, pulse width limited by T
JM
60
A
I
AR
T
c
= 25°C
10
A
E
AR
T
c
= 25°C
30
mJ
dv/dt
I
S
I
DM
, di/dt
100A/
μ
s, V
DD
V
DSS
,
T
j
150°C, R
G
= 0.2
5 V/ns
I
S
= 0
>200 V/ns
P
DHS
T
= 25°C
Derate 4.4W/°C above 25°C
425
W
P
DAMB
T
c
= 25°C
4.5
W
R
thJC
0.16
C/W
R
thJHS
0.23
C/W
P
DC
940
W
Symbol
Test Conditions
Characteristic Values
T
J
= 25°C unless otherwise specified
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3 ma
1000
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 ma
2.5
5.5
V
I
GSS
V
GS
= ±20 V
DC
, V
DS
= 0
±100 nA
I
DSS
V
DS
= 0.8 V
T
J
= 25°C
V
GS
= 0 T
J
= 125°C
50
1
μ
A
mA
R
DS(on)
1.2
g
fs
V
DS
= 15 V, I
D
= 0.5I
D25
, pulse test
6
18
S
V
GS
= 15 V, I
D
= 0.5I
D25
Pulse test, t
300
μ
S, duty cycle d
2%
T
J
-55
+150 °C
T
JM
150
°C
T
stg
-55
+150 °C
T
L
1.6mm (0.063 in) from case for 10 s
300
°C
Weight
3
g
Features
Isolated Substrate
high isolation voltage (>2500V)
excellent thermal transfer
Increased temperature and power
cycling capability
IXYS advanced low Q
g
process
Low gate charge and capacitances
easier to drive
faster switching
Low R
DS(on)
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
Advantages
Optimized for RF and high speed
switching at frequencies to 50MHz
Easy to mount—no insulators needed
High power density
N-Channel Enhancement Mode
Low Q
g
and R
g
High dv/dt
Nanosecond Switching
DRAIN
SG1
SG2
GATE
SD1
SD2
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