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參數(shù)資料
| 型號(hào)： | DE475-102N21A |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF Power MOSFET |
| 中文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | D5, 6 PIN |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 173K |
| 代理商： | DE475-102N21A |
DE475-102N21A
RF Power MOSFET
An
IXYS
Company
2401 Research Blvd., Suite 108
Fort Collins, CO USA 80526
970-493-1901 Fax: 970-493-1903
Email: deiinfo@directedenergy.com
Web: http://www.directedenergy.com
102N21A DE-SERIES SPICE Model
(Preliminary)
The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expan-
sion of the SPICE level 3 MOSFET model. It includes the stray inductive terms
L
G
, L
S
and L
D
. Rd is the R
DS(ON)
of the device, Rds is the resistive leakage term.
The output capacitance, C
OSS
, and reverse transfer capacitance, C
RSS
are mod-
eled with reversed biased diodes. This provides a varactor type response neces-
sary for a high power device model. The turn on delay and the turn off delay are
adjusted via Ron and Roff.
Figure 1 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the DEI web site at
www.directedenergy.com/spice.htm
Net List:
.SUBCKT 102N21A 10 20 30
* TERMINALS: D G S
* 1000 Volt 21 Amp 0.41 ohm N-Channel Power MOSFET
* REV.A 01-09-02
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 0.3
DON 6 2 D1
ROF 5 7 .1
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 5.5N
RD 4 1 0.41
DCOS 3 1 D3
RDS 1 3 5.0MEG
LS 3 30 .5N
LD 10 4 1N
LG 20 5 1N
.MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=3.8)
.MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N)
.MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.4 VJ=.6 TT=400N RS=10M)
.MODEL D3 D (IS=.5F CJO=900P BV=1000 M=.3 VJ=.4 TT=400N RS=10M)
.ENDS
Doc #9200-0247 Rev 4
2003 IXYS RF
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| DE475-102N21A_09 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:RF Power MOSFET |
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