參數(shù)資料
型號(hào): DF3A8.2LFV
廠商: Toshiba Corporation
英文描述: Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.86 to 21.08; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
中文描述: 產(chǎn)品使用,但對(duì)靜電放電(ESD保護(hù))
文件頁數(shù): 2/3頁
文件大小: 137K
代理商: DF3A8.2LFV
DF3A8.2LFV
2007-11-01
2
Guaranteed Level of ESD Immunity
Test Condition
ESD Immunity Level
IEC61000-4-2
(contact discharge)
±
6 kV
Criterion: No damage to device elements
Marking
Equivalent Circuit
(top view)
Reverse voltage V
R
(V)
C
T
– V
R
T
T
10
1
0
5
10
7
6
2
1
3
4
Ta
=
25°C
f
=
1 MHz
9
8
I
Z
– V
Z
Zener voltage V
Z
(V)
Z
Z
15
11
8
10
6
7
14
5
12
13
1
μ
10
μ
10 m
100 m
9
100
μ
1 m
FU
Q1
Q2
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