參數(shù)資料
型號(hào): DFM600LXS12-A
英文描述: Fast Recovery Diode Modules - Single Diode
中文描述: 快恢復(fù)二極管模塊-單二極管
文件頁數(shù): 2/7頁
文件大?。?/td> 132K
代理商: DFM600LXS12-A
DFM600FXM12-A000
2/7
www.dynexsemi.com
Units
V
A
A
kA
2
s
W
kV
pC
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25C unless stated otherwise
Symbol
V
RRM
I
F
I
FM
I
2
t
Pmax
V
isol
Q
pd
Test Conditions
T
vj
= 125C
DC, T
case
= 75C, T
vj
= 125C
T
case
= 110C, t
p
= 1ms
V
R
= 0, t
p
= 10ms, T
vj
= 125C
T
case
= 25C, T
vj
= 125C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V
1
= 1200V, V
2
= 900V, 50Hz RMS
Max.
1200
600
1200
100
2500
4
10
Parameter
Repetitive peak reverse voltage
Forward current (per arm)
Max. forward current
I
2
t value fuse current rating
Maximum power dissipation
Isolation voltage
Partial discharge
Test Conditions
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
-
-
Mounting - M6
Electrical connections - M8
Parameter
Thermal resistance - diode (per arm)
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
R
th(c-h)
T
j
T
stg
-
Units
C/kW
C/kW
C
C
Nm
Nm
Max.
40
8
125
125
5
10
Typ.
-
-
-
-
-
-
Min.
-
-
-
–40
-
-
Internal insulation:
Baseplate material:
Creepage distance:
Clearance:
CTI (Critical Tracking Index): 175
AlN
AlSiC
20mm
10mm
相關(guān)PDF資料
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DFMP1 TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 35V V(BR)DSS | CHIP
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