參數(shù)資料
型號: DG2001DV-T1-E3
廠商: Vishay Siliconix
文件頁數(shù): 3/13頁
文件大?。?/td> 0K
描述: IC ANLG SWITCH SPDT LV 6TSOP
標(biāo)準(zhǔn)包裝: 3,000
功能: 開關(guān)
電路: 1 x SPDT - NC/NO
導(dǎo)通狀態(tài)電阻: 7 歐姆
電壓電源: 單電源
電壓 - 電源,單路/雙路(±): 1.8 V ~ 5.5 V
電流 - 電源: 10nA
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 6-TSOP(0.065",1.65mm 寬)
供應(yīng)商設(shè)備封裝: 6-TSOP
包裝: 帶卷 (TR)
AN823
Vishay Siliconix
www.vishay.com
2
Document Number: 71743
27-Feb-04
255 260_C
1X4_C/s (max)
3-6_C/s (max)
10 s (max)
Reflow Zone
Pre-Heating Zone
3_C/s (max)
140 170_C
Maximum peak temperature at 240_C is allowed.
FIGURE 3.
Solder Reflow Temperature and Time Durations
60-120 s (min)
217_C
60 s (max)
THERMAL PERFORMANCE
A basic measure of a device’s thermal performance is the
junction-to-case
thermal
resistance,
Rqjc,
or
the
junction-to-foot thermal resistance, Rqjf. This parameter is
measured for the device mounted to an infinite heat sink and
is therefore a characterization of the device only, in other
words, independent of the properties of the object to which the
device is mounted. Table 1 shows the thermal performance
of the TSOP-6.
TABLE 1.
Equivalent Steady State Performance—TSOP-6
Thermal Resistance Rqjf
30_C/W
SYSTEM AND ELECTRICAL IMPACT OF
TSOP-6
In any design, one must take into account the change in
MOSFET rDS(on) with temperature (Figure 4).
0.6
0.8
1.0
1.2
1.4
1.6
50
25
0
25
50
75
100
125
150
VGS = 4.5 V
ID = 6.1 A
On-Resistance vs. Junction Temperature
TJ Junction Temperature (_C)
FIGURE 4.
Si3434DV
r DS
(on)
On-Resiistance (Normalized)
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