參數(shù)資料
型號: DG201CJ
廠商: Harris Corporation
英文描述: CMOS Dual/Quad SPST Analog Switches
中文描述: CMOS雙/四路SPST模擬開關(guān)
文件頁數(shù): 3/8頁
文件大?。?/td> 107K
代理商: DG201CJ
DG201HS
Siliconix
E-77071—Rev. E, 01-Sep-97
3
Conditions Unless
Otherwise Specified
V+ = 15 V V
V
IN
= 3 V, 0.8 V
f
15 V
A Suffix
–55 to 125 C
D Suffix
–40 to 85 C
Parameter
Symbol
Temp
b
Typ
c
Min
d
Max
d
Min
d
Max
d
Unit
Analog Switch
Analog Signal Range
e
V
ANALOG
Full
V–
V+
V–
V+
V
Drain-Source On-Resistance
r
DS(on)
I
S
= –10 mA, V
D
=
V+ = 13.5 V, V– = –13.5 V
8.5 V
Room
Full
25
50
75
50
75
r
DS(on)
Match
Room
3
%
Switch Off Leakage Current
I
S(off)
V+ = 16.5 V, V– = –16.5 V
V
D =
V
S
=
15.5 V
15.5 V
Room
Full
0.1
–1
–60
1
60
–1
–20
1
20
I
D(off)
Room
Full
0.1
–1
–60
1
60
–1
–20
1
20
nA
Channel On Leakage Current
I
D(on)
V+ = 16.5 V, V– = –16.5 V
V
S
= V
D
=
15.5 V
Room
Full
0.1
–1
–60
1
60
–1
–20
1
20
Digital Control
Input, High Voltage
V
INH
V
INL
Full
2.4
2.4
V
Input, Low Voltage
Full
0.8
0.8
Input Capacitance
C
in
Full
5
pF
Input Current
I
INL
or
I
INH
V
IN
under test = 0.8 V, 3 V
Full
–1
1
–1
1
A
Dynamic Characteristics
Turn-On Time
t
ON
R
L
= 1 k
V
S
=
10 V, V
INH
= 3 V
See Figure 3
Room
Full
48
60
75
60
75
Turn-Off Time
t
OFF1
, C
L
= 35 pF
Room
Full
30
50
70
50
70
ns
t
OFF2
Room
150
Output Settling Time to 0.1%
t
s
Room
180
Charge Injection
Q
C
L
= 1 nF, V
S
= 0 V
V
gen
= 0 V, R
gen
= 0
Room
–5
pC
OFF Isloation
OIRR
R
L
= 1 k
, C
L
= 10 pF
f = 100 kHz
Room
85
dB
Crosstalk
(Channel-to-Channel)
X
TALK
Any Other Channel Switches
R
L
= 1 k
f = 100 kHz
, C
L
= 10 pF
Room
100
Source Off Capacitance
C
S(off)
Room
8
Drain Off Capacitance
C
D(off)
= 0 V f = 1 MHz
V
S
, V
D
= 0 V, f = 1 MHz
Room
8
pF
Channel On Capacitance
C
D(on)
Room
30
Drain-to-Source Capacitance
C
DS(off)
Room
0.5
Power Supplies
Positive Supply Current
I+
V+ = 15 V V = 15 V
V+ = 15 V, V– = –15 V
V
IN
= 0 or 5 V
Room
Full
4.5
10
10
mA
Negative Supply Current
I–
Room
Full
3.5
–6
–6
Power Consumption
c
P
C
Full
240
240
mW
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