參數(shù)資料
型號(hào)： DG202BDQ
廠商： Vishay Intertechnology,Inc.
英文描述： Improved Quad CMOS Analog Switches
中文描述： 改進(jìn)的四CMOS模擬開(kāi)關(guān)
文件頁(yè)數(shù)： 2/11頁(yè)
文件大?。?/td> 447K
代理商： DG202BDQ
D
Quad SPST CMOS Analog Switches
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS (DG212)
V+ to V-
…………………………………
.............
………………
.44V
V
IN
to Ground
…………………………
..................
…
.
……
...V-, V+
V
L
to Ground
………
....................
………………………
.-0.3V, 25V
V
S
or V
D
to V+
……
...........................
………………………
0, -40V
V
S
or V
D
to V-
……………
........................
…………………
..0, 40V
V+ to Ground
…………………
...................................
………
...25V
V- to Ground
……………………………………
.................
…
...-25V
Current, Any Terminal Except S or D
………
.............
……
...30mA
Continuous Current, S or D
……………………
..............
…
...20mA
Peak Current, S or D
(pulsed at 1ms 10% duty cycle max)
…
..........................70mA
ELECTRICAL CHARACTERISTICS (DG212)
(V+ = +15V, V- = -15V, GND = 0, T
A
= +25
°
C, unless otherwise noted.) (For more information on TYP values see Note 2.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Storage Temperature Range
……………
..
……
..-65
°
C to +125
°
C
Operating Temperature Range
DG211C................................
……………
...
……
...0
°
C to +70
°
C
DG211D/E .........................
……………
...
……
...-40
°
C to +85
°
C
Power Dissipation (T
A
= +70
°
C) (Note 1)
16-Pin Plastic Dip (derate 10.5mW/
°
C above +70
°
C) ..842mW
16-Pin Narrow SO (derate 8.7mW/
°
C above+70
°
C).....696mW
16-Pin TSSOP (derate 9.4mW/
°
C above +70
°
C) ..........755mW
16-Pin QFN (5
5)
(derate 19.2mW/
°
C above +70
°
C).........................1538mW
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
SWITCH
Analog Signal Range
Drain-Source ON-Resistance
V
ANALOG
R
DS (ON)
-15
+15
175
5.0
V
V
D
= ±10V, V
IN
= 2.4V, I
S
= 1mA
V
S
= 14V, V
D
= -14V
V
IN
= 0.8V
V
S
= -14V, V
D
= 14V
V
S
= 14V, V
D
= -14V
V
IN
= 0.8V
V
S
= -14V, V
D
= 14V
V
S
= V
D
= 14V, V
IN
= 2.4V
V
S
= V
D
= -14V, V
IN
= 2.4V
115
0.01
-0.02
0.01
-0.02
0.1
-0.15
Source OFF-Leakage Current
I
S (OFF)
-5.0
5.0
Drain OFF-Leakage Current
I
D (OFF)
-5.0
5.0
Drain ON-Leakage Current
(Note 3)
I
D (ON)
-5.0
nA
INPUT
V
IN
= 2.4V
V
IN
= 15V
-1.0
-0.0004
0.003
Input Current with Input Voltage
High
I
INH
1.0
Input Current with Input Voltage
Low
I
INL
V
IN
= 0
-1.0
-0.0004
μA
DYNAMIC
Turn-ON Time
t
ON
t
OFF1
t
OFF2
C
S (OFF)
C
D (OFF)
C
D + S (ON)
OIRR
460
360
450
5
5
16
70
1000
500
Turn-OFF Time
See Switching Time Test Circuit
V
S
= 2V, R
L
= 1k
, C
L
= 35pF
ns
Source OFF-Capacitance
Drain OFF-Capacitance
Channel ON-Capacitance
OFF-Isolation (Note 4)
V
S
= 0, V
IN
= 0, f = 1MHz
V
D
= 0, V
IN
= 0, f = 1MHz
V
D
= V
S
= 0, V
IN
= 5V, f = 1MHz
pF
Crosstalk
(Channel to Channel)
CCRR
V
IN
= 0, R
L
= 1k
, C
L
= 15pF,
V
S
= 1VRMS, f = 100kHz
90
dB
Note 1:
Device mounted with all leads soldered to PC board.
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