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參數(shù)資料
| 型號： | DG2034DN-T1-E4 |
| 廠商： | Vishay Siliconix |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC MULTIPLEXER 4X1 12QFN |
| 標(biāo)準(zhǔn)包裝： | 2,500 |
| 功能： | 多路復(fù)用器 |
| 電路： | 1 x 4:1 |
| 導(dǎo)通狀態(tài)電阻： | 5.5 歐姆 |
| 電壓電源： | 單電源 |
| 電壓 - 電源，單路/雙路(±)： | 1.8 V ~ 5.5 V |
| 電流 - 電源： | 1µA |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 12-VFQFN 裸露焊盤 |
| 供應(yīng)商設(shè)備封裝： | 12-QFN（3x3） |
| 包裝： | 帶卷 (TR) |
www.vishay.com
2
Document Number: 72418
S-80164-Rev. D, 28-Jan-08
Vishay Siliconix
DG2034
Notes:
a. Signals on SX, DX, EN or AX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 16.2 mV/°C above 70 °C.
d. Derate 4.0 mV/°C above 70 °C.
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
Unit
Referenced V+ to GND
- 0.3 to + 6
V
AX, EN, SX, COM
a
- 0.3 to (V+ + 0.3)
Continuous Current (Any Terminal)
± 50
mA
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
± 100
Power Dissipation (Packags)b
QFN-12 (3 x 3 mm)c
1295
mW
MSOP-10d
320
Storage Temperature (D Suffix)
- 65 to 150
°C
SPECIFICATIONS (V+ = 3 V)
Parameter
Symbol
Test Conditions
Otherwise Unless Specified
V+ = 3 V, ± 10 %, VAL = 0.4 V, VAH = 1.5 V
e
Temp.a
Limits
- 40 to 85 °C
Unit
Min.c
Typ.b
Max.c
Analog Switch
Analog Signal Ranged
VANALOG
Full
0
V+
V
On-Resistance
rON
V+ = 2.7 V, VCOM = 0.5 V/1.5 V/2.0 V
IS = 10 mA
Room
Full
47
9
Ω
rON Match
Δr
ON
Room
0.1
0.3
rON Flatness
d,f
rON
Flatness
Room
0.3
1.5
Off Leakage Currentg
IS(off)
V+ = 3.3 V, VS = 1 V/3 V
VCOM = 3 V/1 V, VEN = 0 V
Room
Full
- 1
- 10
0.3
1
10
nA
COM Off Leakage Currentg
ICOM(off)
Room
Full
- 1
- 10
0.3
1
10
Channel-On Leakage Currentg
ICOM(on)
V+ = 3.3 V
VCOM = VS = 1 V/3 V
Room
Full
- 1
- 10
0.3
1
10
Digital Control
Input Currentd
IA or IEN
VA/EN = 0 or V+, See Truth Table
Full
- 1.0
1.0
A
Input High Voltaged
VAH or VENH
Full
1.5
V
Input Low Voltaged
VAL or VENL
Full
0.4
Dynamic Characteristics
Turn-On Time
tON
VS = 1.5 V, RL = 300 Ω
Room
Full
25
35
45
ns
Turn-Off Time
tOFF
Room
Full
15
25
35
Break-Before-Make Timed
tD
Room
10.5
Transition Time
ttrans
VS = 1.5 V/0 V, VS = 0 V/1.5 V, RL = 300 Ω
Room
Full
30
45
55
Charge Injectiond
QINJ
CL = 1 nF, Vgen = 0 V, Rgen = 0 Ω
Room
- 4.7
pC
Off-Isolationd
OIRR
RL = 50 Ω, CL = 5 pF
f = 1 MHz
Room
- 73
dB
f = 10 MHz
Room
- 54
Channel-to-Channel Crosstalkd
XTALK
RL = 50 Ω, CL = 5 pF
f = 1 MHz
Room
- 77
f = 10 MHz
Room
- 59
Off Capacitanced
CS(off)
V+ = 2.7 V, f = 1 MHz
Room
14
pF
COM Off Capacitanced
CCOM(off)
Room
46
COM On Capacitanced
CCOM(on)
Room
67
Power Supply
Power Supply Range
V+
2.7
3.3
V
Power Supply Currentd
I+
V+ = 3.3 V, VA/EN = 0 or 3.3 V, See Truth Table
Full
1.0
A
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