參數(shù)資料
型號: DG211BDY-E3
廠商: Vishay Siliconix
文件頁數(shù): 9/14頁
文件大?。?/td> 0K
描述: IC SWITCH QUAD SPST 16SOIC
標準包裝: 500
功能: 開關(guān)
電路: 4 x SPST - NC
導(dǎo)通狀態(tài)電阻: 160 歐姆
電壓電源: 單/雙電源
電壓 - 電源,單路/雙路(±): 4.5 V ~ 25 V,±4.5 V ~ 22 V
電流 - 電源: 10µA
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 16-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 16-SOIC
包裝: 管件
www.vishay.com
4
Document Number: 70040
S11-0179-Rev. J, 07-Feb-11
Vishay Siliconix
DG211B, DG212B
Notes:
a. Room = 25 °C, Full = as determined by the operating temperature suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. Guaranteed by design, not subject to production test.
e. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
SPECIFICATIONS (for Single Supply)
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V
VL = 5 V, VIN = 2.4 V, 0.8 V
e
Temp.a
D Suffix
- 40 °C to 85 °C
Unit
Min.b
Typ.c
Max.b
Analog Switch
Analog Signal Ranged
VANALOG
Full
0
12
V
Drain-Source
On-Resistance
RDS(on)
VD = 3 V, 8 V, IS = 1 mA
Room
Full
90
160
200
Dynamic Characteristics
Turn-On Time
tON
VS = 8 V
see figure 1
Room
300
ns
Turn-Off Time
tOFF
Room
200
Charge Injection
Q
CL = 1 nF, Vgen = 6 V, Rgen = 0
Room
4
pC
Power Supply
Positive Supply Current
I+
VIN = 0 or 5 V
Room
Full
10
50
A
Negative Supply Current
I-
Room
Full
- 10
- 50
Logic Supply Current
IL
Room
Full
10
50
Power Supply Range for
Continuous Operation
VOP
Full
+ 4.5
+ 25
V
RDS(on) vs. VD and Power Supply Voltages
- 20 - 16 - 12
- 8
- 4
0
4
8
12
16
20
40
50
60
70
80
90
100
110
± 5 V
VD - Drain Voltage (V)
± 10 V
± 15 V
± 20 V
30
20
10
R
DS(on)
-Dr
ain-Source
On-Resistance
(Ω
)
RDS(on) vs. VD and Temperature
85 °C
0
10
20
30
40
50
- 15
- 10
- 5
0
5
10
15
VD - Drain Voltage (V)
125 °C
25 °C
- 55 °C
V+ = 15 V
V- = - 15 V
60
70
80
90
100
R
DS(on)
-Dr
ain-Source
On-Resistance
(Ω
)
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