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參數(shù)資料
| 型號(hào)： | DG212BDQ |
| 英文描述： | ANALOG SWITCH|QUAD|SPST|CMOS|TSSOP|16PIN|PLASTIC |
| 中文描述： | 模擬開(kāi)關(guān)|四|聚苯乙烯|的CMOS | TSSOP封裝| 16PIN |塑料 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 148K |
| 代理商： | DG212BDQ |
DG211B/212B
Vishay Siliconix
www.siliconix.com FaxBack 408-970-5600
4
Document Number: 70040
S-52433—Rev. G, 06-Sep-99
Test Conditions
Unless Otherwise Specified
D Suffix
–40 to 85 C
Parameter
Symbol
V+ = 12 V, V– = 0 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
e
Temp
a
Min
b
Typ
c
Max
b
Unit
Analog Switch
Analog Signal Range
d
V
ANALOG
Full
0
12
V
Drain-Source On-Resistance
r
DS(on)
V
D
= 3 V, 8 V, I
S
= 1 mA
Room
Full
90
160
200
Dynamic Characteristics
Turn-On Time
t
ON
V
= 8 V
See Figure 2
Room
300
ns
Turn-Off Time
t
OFF
Room
200
Charge Injection
Q
C
L
= 1 nF, V
gen
= 6 V, R
gen
= 0
Room
4
pC
Power Supply
Positive Supply Current
I+
V
IN
= 0 or 5 V
Room
Full
10
50
A
Negative Supply Current
I–
Room
Full
–10
–50
Logic Supply Current
I
L
Room
Full
10
50
Power Supply Range for
Continuous Operation
V
OP
Full
4.5
25
V
Notes:
a.
b.
c.
d.
e.
Room = 25 C, Full = as determined by the operating temperature suffix.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Guaranteed by design, not subject to production test.
V
IN
= input voltage to perform proper function.
85 C
–20 –16 –12
–8
–4
0
4
8
12
16
20
40
50
60
70
80
90
100
110
0
10
20
30
40
50
–15
–10
–5
0
5
10
15
5 V
r
DS(on)
vs. V
D
and Power Supply Voltages
V
D
– Drain Voltage (V)
10 V
15 V
20 V
r
DS(on)
vs. V
D
and Temperature
V
D
– Drain Voltage (V)
125 C
25 C
–55 C
V+ = 15 V
V– = –15 V
30
20
10
60
70
80
90
100
r
)
r
)
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