Not for New Design Notes: a. Room = 25 °C, Fu" />
參數(shù)資料
型號： DG2516DQ-T1-E3
廠商： Vishay Siliconix
文件頁數(shù)： 3/9頁
文件大?。?/td> 0K
描述： IC SWITCH DUAL SPDT 10MSOP
標(biāo)準(zhǔn)包裝： 2,500
功能： 開關(guān)
電路： 2 x SPDT - NC/NO
導(dǎo)通狀態(tài)電阻： 4 歐姆
電壓電源： 單電源
電壓 - 電源，單路/雙路(±)： 1.8 V ~ 5.5 V
電流 - 電源： 10nA
工作溫度： -40°C ~ 85°C
安裝類型： 表面貼裝
封裝/外殼： 10-TFSOP，10-MSOP（0.118"，3.00mm 寬）
供應(yīng)商設(shè)備封裝： 10-MSOP
包裝： 帶卷 (TR)
Document Number: 73453
S-82589-Rev. B, 27-Oct-08
www.vishay.com
3
Vishay Siliconix
DG2515, DG2516
Not for New Design
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e. VIN = input voltage to perform proper function.
f. Guaranteed by 5 V leakage testing, not production tested.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS V+ = 5 V
Parameter
Symbol
Test Conditions
Otherwise Unless Specified
V+ = 5 V, ± 10 %, VIN = 0.8 or 2.0 V
e
Temp.a
Limits
- 40 °C to 85 °C
Unit
Min.b
Typ.c
Max.b
Analog Switch
Analog Signal Ranged
VNO, VNC,
VCOM
Full
0
V+
V
On-Resistance
RON
V+ = 4.2 V, VCOM = 3.5 V, INO/NC = 10 mA
Room
Full
34.0
4.3
Ω
RON Flatness
RON
Flatness
V+ = 4.2 V, VCOM = 1, 2, 3.5 V
INO/NC = 10 mA
Room
Full
1.1
1.4
1.6
RON Match Between Channels
ΔR
ON
V+ = 4.2 V, VCOM = 3.5 V, INO/NC = 10 mA
Room
Full
0.1
0.3
0.4
Switch Off Leakage Current
INO(off),
INC(off)
V+ = 5.5 V
VNO, VNC = 1 V/4.5 V, VCOM = 4.5 V/1 V
Room
Full
- 1
- 10
1
10
nA
ICOM(off)
Room
Full
- 1
- 10
1
10
Channel-On Leakage Current
ICOM(on)
V+ = 5.5 V, VNO, VNC = VCOM = 1 V/4.5 V
Room
Full
- 1
- 10
1
10
Digital Control
Input High Voltaged
VINH
Full
2.0
V
Input Low Voltage
VINL
Full
0.8
Input Capacitance
Cin
Full
12
pF
Input Current
IINL or IINH
VIN = 0 V or V+
Full
1
A
Dynamic Characteristics
Turn-On Time
tON
V+ = 4.2 V, VNO or VNC = 3 V
RL = 300 Ω, CL = 35 pF
Room
Full
25
50
70
ns
Turn-Off Time
tOFF
Room
Full
20
40
50
Break-Before-Make Time
td
VNO or VNC = 3 V, RL = 300 Ω, CL = 35 pF
Full
1
Charge Injectiond
QINJ
CL = 1 nF, VGEN = 0 V, RGEN = 0 Ω
Room
49
pC
- 3 dB Bandwidth
BW
0 dBm, CL = 5 pF, RL = 50 Ω
Room
235
MHz
Off-Isolationd
OIRR
RL = 50 Ω, CL = 5 pF
f = 1 MHz
Room
- 71
dB
f = 10 MHz
Room
- 51
Crosstalkd
XTALK
RL = 50 Ω, CL = 5 pF
f = 1 MHz
Room
- 74
f = 10 MHz
Room
- 52
Source Off Capacitanced
CNO(off)
VIN = 0 or V+, f = 1 MHz
Room
17
pF
CNC(off)
Room
17
Channel-On Capacitanced
CNO(on)
Room
40
CNC(on)
Room
40
Power Supply
Power Supply Range
V+
1.8
5.5
V
Power Supply Current
I+
VIN = 0 or V+
Full
0.01
1.0
A
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