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參數(shù)資料
| 型號： | DG2518DQ-T1-E3 |
| 廠商： | Vishay Siliconix |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC SWITCH DUAL SPDT 10MSOP |
| 標準包裝： | 2,500 |
| 功能： | 開關(guān) |
| 電路： | 2 x SPDT - NC/NO |
| 導通狀態(tài)電阻： | 4 歐姆 |
| 電壓電源： | 單電源 |
| 電壓 - 電源，單路/雙路(±)： | 1.8 V ~ 5.5 V |
| 電流 - 電源： | 10nA |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 10-TFSOP，10-MSOP（0.118"，3.00mm 寬） |
| 供應商設備封裝： | 10-MSOP |
| 包裝： | 帶卷 (TR) |
www.vishay.com
2
Document Number: 74333
S-82589-Rev. B, 27-Oct-08
Vishay Siliconix
DG2517, DG2518
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 4.0 mW/°C above 70 °C.
d. Derate 14.9 mW/°C above 70 °C.
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e. VIN = input voltage to perform proper function.
f. Guaranteed by 5 V leakage testing, not production tested.
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
Unit
Reference to GND
V+
- 0.3 to + 6
V
IN, COM, NC, NOa
- 0.3 to (V+ + 0.3)
Continuous Current (Any terminal)
± 50
mA
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
± 200
Storage Temperature (D Suffix)
- 65 to 150
°C
Power Dissipation (Packages)b
MSOP-10c
320
mW
DFN-10d
1191
SPECIFICATIONS (V+ = 3 V)
Parameter
Symbol
Test Conditions
Otherwise Unless Specified
V+ = 3 V, ± 10 %, VIN = 0.5 or 1.4 V
e
Temp.a
Limits
- 40 °C to 85 °C
Unit
Min.b
Typ.c
Max.b
Analog Switch
Analog Signal Ranged
VNO, VNC,
VCOM
Full
0
V+
V
On-Resistance
RON
V+ = 2.7 V, VCOM = 1.5 V
INO/NC = 10 mA
Room
Full
3.2
4.5
5.0
Ω
RON Flatness
RON
Flatness
V+ = 2.7 V, VCOM = 1.5, 2 V
INO/NC = 10 mA
Room
Full
1.0
1.4
16
RON Match Between Channels
ΔR
ON
V+ = 2.7 V, VCOM = 1.5 V
INO/NC = 10 mA
Room
Full
0.1
0.3
0.4
Switch Off Leakage Currentf
INO(off),
INC(off)
V+ = 3.6 V, VNO, VNC = 0.3 V/ 3 V
VCOM = 3 V/0.3 V
Room
Full
- 1
- 10
1
10
nA
ICOM(off)
Room
Full
- 1
- 10
1
10
Channel-On Leakage Currentf
ICOM(on)
V+ = 3.6 V, VNO, VNC = VCOM = 0.3 V/3 V
Room
Full
- 1
- 10
1
10
Digital Control
Input High Voltaged
VINH
Full
1.4
V
Input Low Voltage
VINL
Full
0.5
Input Capacitance
Cin
Full
4
pF
Input Current
IINL or IINH
Full
1
A
Dynamic Characteristics
Turn-On Time
tON
V+ = 2.7 V, VNO or VNC = 1.5 V
RL = 300 Ω, CL = 35 pF
Room
Full
15
30
50
ns
Turn-Off Time
tOFF
Room
Full
10
25
35
Break-Before-Make Time
td
VNO or VNC = 1.5 V, RL = 300 Ω, CL = 35 pF
Full
1
Charge Injectiond
QINJ
CL = 1 nF, VGEN = 1.5 V, RGEN = 0 Ω
Room
1
pC
- 3 dB Bandwidth
BW
0 dBm, CL = 5 pF, RL = 50 Ω
Room
242
MHz
Off-Isolationd
OIRR
RL = 50 Ω, CL = 5 pF
f = 1 MHz
Room
- 71
dB
f = 10 MHz
Room
- 51
Crosstalkd
XTALK
RL = 50 Ω, CL = 5 pF
f = 1 MHz
Room
- 73
f = 10 MHz
Room
- 55
NO, NC Off Capacitance
d
CNO(off)
VIN = 0 or V+, f = 1 MHz
Room
8
pF
CNC(off)
Room
8
Channel-On Capacitanced
CNO(on)
Room
35
CNC(on)
Room
35
Power Supply
Power Supply Current
I+
VIN = 0 or V+
Full
0.01
1.0
A
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