參數(shù)資料
型號(hào)： DG271BDY-E3
廠商： Vishay Siliconix
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 0K
描述： IC SWITCH QUAD SPST 16SOIC
標(biāo)準(zhǔn)包裝： 500
功能： 開(kāi)關(guān)
電路： 4 x SPST - NC
導(dǎo)通狀態(tài)電阻： 50 歐姆
電壓電源： 雙電源
電壓 - 電源，單路/雙路(±)： ±15V
電流 - 電源： 5.5mA
工作溫度： -40°C ~ 85°C
安裝類型： 表面貼裝
封裝/外殼： 16-SOIC（0.154"，3.90mm 寬）
供應(yīng)商設(shè)備封裝： 16-SOIC N
包裝： 管件
DG271B
Vishay Siliconix
www.vishay.com
2
Document Number: 70966
S-42137—Rev. B, 15-Nov-04
ABSOLUTE MAXIMUM RATINGS
V+ to V
44 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GND to V
25 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Digital Inputsa VS, VD
(V) 2 V to (V+) +2 V or
. . . . . . . . . . . . . . . . . . . . . . . . .
20 mA, whichever occurs first
Current, Any Terminal
30 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Current, S or D
(Pulsed at 1 ms, 10% duty cycle max)
100 mA
. . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature
(DY Suffix)
65 to 150_C
. . . . . . . . . . . . . . . . . . .
(CJ Suffix)
65 to 125_C
. . . . . . . . . . . . . . . . . . .
Power Dissipation (Package)b
16-Pin Plastic DIPc
470 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
16-Pin Plastic Narrow SOICd
600 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a.
Signals on SX, DX, or INX exceeding V+ or V will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b.
All leads welded or soldered to PC Board.
c.
Derate 6.5 mW/_C above 75_C
d.
Derate 7.6 mW/_C above 75_C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONSa
Test Conditions
Unless Specified
V
15 V V
15 V
C, D Suffix
0 to 70_C
40 to 85_C
Parameter
Symbol
V+ = 15 V, V = 15 V
VIN = 2.4 V, 0.8 Vf
Tempb
Mind
Typc
Maxd
Unit
Analog Switch
Analog Signal Rangee
VANALOG
Full
15
V
Drain-Source On-Resistance
rDS(on)
IS = 1 mA, VD = "10 V
Room
Full
32
50
75
W
Switch Off Leakage Current
IS(off)
VD = "14 V VS = #14 V
Room
Full
1
20
"0.05
1
20
Switch Off Leakage Current
ID(off)
VD = "14 V, VS = #14 V
Room
Full
1
20
"0.05
1
20
nA
Channel On Leakage Current
ID(on) +
IS(on)
VS = VD = "14 V
Room
Full
1
20
"0.05
1
20
Digital Control
Input Current with Voltage High
IINH
VIN = 2 V
Full
1
0.010
1
Input Current with Voltage High
IINH
VIN = 15 V
Full
1
0.010
1
mA
Input Current with Voltage Low
IINL
VIN = 0 V
Full
1
0.010
1
m
Dynamic Characteristics
Turn-On Time
tON
VS = "10 V
Room
Full
55
65
80
ns
Turn-Off Time
tOFF
VS = "10 V
See Figure 3
Room
Full
50
65
80
ns
Charge Injection
Q
CL = 1 nF, VS = 0 V
Vgen = 0 V, Rgen = 0 W
See Figure 3
Room
5
pC
Source Off Capacitance
CS(off)
VS = 0 V, VIN = 5 V
Room
8
Drain Off Capacitance
CD(off)
VS = 0 V, VIN = 5 V
f = 1 MHz
Room
8
pF
Channel On Capacitance
CD(on)
VD = VS = 0 V, VIN = 0 V
Room
30
p
Off Isolation
OIRR
CL = 10 pF, RL = 1 kW
f = 100 kHz
Room
85
dB
Crosstalk
XTALK
f = 100 kHz
See Figures 4 and 5
Room
100
dB
Supply
Positive Supply Current
I+
All Channels On or Off
Room
Full
5.5
7.5
9
mA
Negative Supply Current
I
All Channels On or Off
VIN = 5 V or 0 V
Room
Full
6
8
3.4
mA
Notes:
a.
Refer to PROCESS OPTION FLOWCHART.
b.
Room = 25_C, Full = as determined by the operating temperature suffix.
c.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e.
Guaranteed by design, not subject to production test.
f.
VIN = input voltage to perform proper function.
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