參數(shù)資料
型號(hào): DG2720DN-T1-E4
廠商: Vishay Siliconix
文件頁(yè)數(shù): 8/10頁(yè)
文件大小: 0K
描述: IC SWITCH DPDT USB2.0 10-MINIQFN
標(biāo)準(zhǔn)包裝: 1
功能: USB 開(kāi)關(guān)
電路: 2 x DPDT
導(dǎo)通狀態(tài)電阻: 7 歐姆
電壓電源: 單電源
電壓 - 電源,單路/雙路(±): 2.6 V ~ 4.3 V
電流 - 電源: 2µA
工作溫度: -40°C ~ 85°C
安裝類(lèi)型: 表面貼裝
封裝/外殼: 10-UFQFN
供應(yīng)商設(shè)備封裝: 10-迷你型QFN(1.4x1.8)
包裝: 標(biāo)準(zhǔn)包裝
其它名稱: DG2720DN-T1-E4DKR
Vishay Siliconix
DG2720
Document Number: 74593
S12-2498-Rev. D, 22-Oct-12
www.vishay.com
7
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: analogswitchtechsupport@vishay.com
TEST CIRCUITS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74593.
Figure 2. Break-Before-Make Interval
CL (includes fixture and stray capacitance)
HSD2±
VHSD1±
HSD1±
VHSD2±
0 V
Logic
Input
Switch
Output
VO
VNC = VNO
tr < 5 ns
tf < 5 ns
90 %
tD
OE
V+
GND
V+
CL
35 pF
VO
RL
50
Ω
VINL
VINH
S
Figure 3. Charge Injection
Off
On
IN
VOUT
Q =
OUT x CL
CL = 1 nF
Rgen
VOUT
VIN = 0 - V+
OE
GND
V+
IN depends on switch configuration: input polarity
determined by sense of switch.
+
HSD1±
or HSD2±
Vgen
S
Figure 4. Off-Isolation
OE
GND
HSD1± or HSD2±
0 V, 2.4 V
10 nF
Off Isolation
20 log
V
VHSD2± or HSD1±
RL
Analyzer
V+
=
S
Figure 5. Channel Off/On Capacitance
HSD1±
or HSD2±
f = 1 MHz
OE
GND
0 V, 2.4 V
Meter
HP4192A
Impedance
Analyzer
or Equivalent
10 nF
V+
S
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