參數(shù)資料
型號: DG2750DN-T1-E4
廠商: Vishay Siliconix
文件頁數(shù): 2/9頁
文件大?。?/td> 0K
描述: IC SWITCH LV DUAL SPST 10MINIQFN
標(biāo)準(zhǔn)包裝: 3,000
功能: 開關(guān)
電路: 2 x SPDT - NC/NO
導(dǎo)通狀態(tài)電阻: 1 歐姆
電壓電源: 單電源
電壓 - 電源,單路/雙路(±): 1.8 V ~ 5 V
電流 - 電源: 2µA
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 10-UFQFN
供應(yīng)商設(shè)備封裝: 10-迷你型QFN(1.4x1.8)
包裝: 帶卷 (TR)
www.vishay.com
2
Document Number: 64736
S10-0650-Rev. C, 22-Mar-10
Vishay Siliconix
DG2750
Notes:
a. Signals on COM, NO, NC, exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 2.6 mW/°C above 70 °C.
TRUTH TABLE, DG2750
IN1 (Pin 4)
IN2 (Pin 8)
Function
0
X
COM1 = NC1
1
X
COM1 = NO1
X
0
COM2 = NC2
X
1
COM2 = NO2
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Limit
Unit
Reference to GND
V+, IN
- 0.3 to 5.5
V
COM, NO, NCa
(V+) - 5.5 or - 2.5 whichever higher, (V+ + 0.3)
Current (Any Terminal except COM, NO, NC, IN)
30
mA
Continuous Current (COM, NO, NC, IN)
± 250
Peak Current (Pulsed at 1 ms, 10 % Duty Cycle)
± 500
Storage Temperature (D Suffix)
- 65 to 150
°C
Power Dissipation (Packages)b
miniQFN-10c
208
mW
ESD (Human Body Model) I/O to GND
8
kV
Latch-up (per JESD78)
500
mA
SPECIFICATIONS V+ = 2.7 V, ± 10 %
Parameter
Symbol
Test Conditions
Otherwise Unless Specified
Temp.a
Limits
- 40 °C to 85 °C
Unit
Min.b
Typ.c
Max.b
Analog Switch
Analog Signal Ranged
VANALOG
Full
- 2.5
V+
V
On-Resistance
RDS(on)
V+ = 2.7 V, VS = ((V+) - 4.5 V, - 1 V, 0 V, 1 V,
2 V, V+), IS = 100 mA
Room
0.6
1.0
Ω
Full
1.3
On-Resistance Match
ΔR
ON
Room
0.1
On-Resistance Resistance
Flatness
RON Flatness
Room
0.5
Switch Off Leakage Current
INO/NC(off)
V+ = 2.7 V, VNC/NO = - 2.5 V or 2.5 V,
VCOM = 2.5 V or - 2.5 V
Room
50
nA
ICOM(off)
Full
- 250
250
Channel On Leakage Current
ICOM(on)
Room
50
Full
- 250
250
Digital Control
Input Voltage High
VINH
V+ = 2.7 V to 4.3 V
Full
1.4
V
Input Voltage Low
VINL
Full
0.6
Input Capacitance
CIN
Room
6.5
pF
Input Current
IINL or IINH
VIN = 0 or V+
Full
- 1
1
A
Dynamic Characteristics
Break-Before-Make Timee, d
tBBM
V+ = 3.0 V, VS = 1.5 V, RL = 50 Ω,
CL = 35 pF
Room
800
1040
ns
Full
1000
Enable Turn-On Timee, d
tON(EN)
Room
1140
1350
Full
1700
Enable Turn-Off Timee, d
tOFF(EN)
Room
90
130
Full
150
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