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參數(shù)資料
| 型號(hào)： | DG300CK |
| 廠商： | MAXIM INTEGRATED PRODUCTS INC |
| 元件分類： | 運(yùn)動(dòng)控制電子 |
| 英文描述： | TTL Compatible CMOS Analog Switches |
| 中文描述： | DUAL 1-CHANNEL, SGL POLE SGL THROW SWITCH, CDIP14 |
| 封裝： | 0.300 INCH, CERAMIC, DIP-14 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 70K |
| 代理商： | DG300CK |
DG3000
Vishay Siliconix
www.vishay.com
2
Document Number: 71742
S-21483
—
Rev. C, 26-Aug-02
ABSOLUTE MAXIMUM RATINGS
Reference to GND
V+
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IN, COM, NC, NO
a
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Current (Any terminal)
Peak Current
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(Pulsed at 1 ms, 10% duty cycle)
Storage Temperature (D Suffix)
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
-0.3 to +6 V
-0.3 to (V+ + 0.3 V)
50 mA
200 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . .
-65 to 150
°
C
Package Reflow Conditions
b
VPR
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IR/Convection
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
215
°
C
220
°
C
Power Dissipation (Packages)
c
6-Bump, 2 x 3 MICRO FOOT
d
250 mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a
Signals on NC, NO, or COM or IN exceeding V+ will be clamped by
internal diodes. Limit forward diode current to maximum current ratings.
Refer to IPC/JEDEC (J-STD-020A). No hand/manual solder rework
recommended
All bumps soldered to PC Board.
Derate 6.5 mW/ C above 25 C
b
c
d
SPECIFICATIONS (V+ = 2.0 V)
Test Conditions
Otherwise Unless Specified
Limits
-40 to 85 C
Parameter
Symbol
V+ = 2.0 V,
10%, V
IN
= 0.4 or 1.6 V
e
Temp
a
Min
b
Typ
c
Max
b
Unit
Analog Switch
Analog Signal Range
d
V
NO
, V
NC
,
V
COM
Full
0
V+
V
On-Resistance
r
ON
V+ = 1.8 V, V
COM
= 1.0 V, I
NO
, I
NC
= 10 mA
Room
Full
d
17
20
22.5
r
ON
Flatness
d
r
Flatness
V+ = 1.8 V, V
COM
= 0 to V+, I
NO
, I
NC
= 10 mA
Room
14
I
NO(off),
I
NC(off)
V+ = 2.2 V
Room
Full
d
-700
-11
700
11
pA
nA
Switch Off Leakage Current
f
I
COM(off)
V
NO,
V
NC
= 0.5 V/1.5 V, V
COM
= 1.5 V/0.5 V
Room
Full
d
-700
-11
700
11
pA
nA
Channel-On Leakage Current
f
I
COM(on)
V+ = 2.2 V, V
NO,
V
NC
= V
COM
= 0.5 V/1.5 V
Room
Full
d
-700
-11
700
11
pA
nA
Digital Control
Input High Voltage
V
INH
Full
1.6
Input Low Voltage
V
INL
Full
0.4
V
Input Capacitance
d
C
in
Full
5
pF
Input Current
d
I
INL
or I
INH
V
IN
= 0 or V+
Full
-1
1
A
Dynamic Characteristics
Turn-On Time
t
ON
Room
Full
d
61
76
79
Turn-Off Time
t
OFF
V
NO
or V
NC
= 1.5 V, R
= 300 , C
L
= 35 pF
Figures 1 and 2
Room
Full
d
17
33
36
ns
Break-Before-Make Time
t
d
Room
1
45
Charge Injection
d
Q
INJ
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0 , Figure 3
Room
2
pC
Off-Isolation
d
OIRR
Room
-61
Crosstalk
d
X
TALK
R
L
= 50 , C
L
= 5 pF, f = 1 MHz
Room
-67
dB
NO, NC Off Capacitance
d
C
NO(off),
C
NC(off)
V
IN
= 0 or V+, f = 1 MHz
Room
31
pF
Channel-On Capacitance
d
C
ON
Room
98
Power Supply
Power Supply Range
V+
1.8
2.2
V
Power Supply Current
d
I+
0.1
1.0
A
Power Consumption
P
C
V
IN
= 0 or V+
2.2
W
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