參數(shù)資料
型號： DG411HSDY-T1
廠商： Vishay Siliconix
文件頁數(shù)： 9/15頁
文件大?。?/td> 0K
描述： IC SWITCH QUAD SPST 16-SOIC
標準包裝： 1
功能： 開關(guān)
電路： 4 x SPST - NC
導(dǎo)通狀態(tài)電阻： 80 歐姆
電流 - 電源： 1µA
工作溫度： -40°C ~ 85°C
安裝類型： 表面貼裝
封裝/外殼： 16-SOIC（0.154"，3.90mm 寬）
供應(yīng)商設(shè)備封裝： 16-SOIC N
包裝： 標準包裝
其它名稱： DG411HSDY-T1DKR
Vishay Siliconix
DG411HS, DG412HS, DG413HS
Document Number: 72053
S13-1283-Rev. D, 27-May-13
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 6 mW/°C above 25 °C.
d. Derate 7.6 mW/°C above 75 °C.
e. Derate 12 mW/°C above 75 °C.
f. Derate 23.5 mW/°C above 70 °C.
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
Unit
V+ to V-
44
V
GND to V-
25
VL
(GND - 0.3) to (V+) + 0.3
Digital Inputsa, VS, VD
(V-) - 2 to (V+) + 2
or 30 mA, whichever occurs first
Continuous Current (Any terminal)
30
mA
Peak Current, S or D (Pulsed 1 ms, 10 % duty cycle)
100
Storage Temperature
(AK, AZ Suffix)
- 65 to 150
°C
(DJ, DY, DN Suffix)
- 65 to 125
Power Dissipation (Package)b
16-Pin Plastic DIPc
470
mW
16-Pin Narrow SOICd
600
16-Pin CerDIPe
900
LCC-20e
900
16-Pin (4 x 4 mm) QFNf
1880
SPECIFICATIONSa
Parameter
Symbol
Test Conditions
Unless Specified
V+ = 15 V, V- = - 15 V
VL = 5 V, VIN = 2.4 V, 0.8 V
f
Temp.b
Typ.c
A Suffix
- 55 °C to 125 °C
D Suffix
- 40 °C to 85 °C
Unit
Min.d
Max.d
Min.d
Max.d
Analog Switch
Analog Signal Rangee
VANALOG
Full
- 15
15
- 15
15
V
Drain-Source
On-Resistance
RDS(on)
V+ = 13.5 V, V- = - 13.5 V
IS = - 10 mA, VD = ± 8.5 V
Room
Full
25
35
45
35
45
Switch Off
Leakage Current
IS(off)
V+ = 16.5 V, V- = - 16.5 V
VD = ± 15.5 mA, VS = ± 15.5 V
Room
Full
± 0.1
- 0.25
- 20
0.25
20
- 0.25
- 5
0.25
5
nA
ID(off)
Room
Full
± 0.1
- 0.25
- 20
0.25
20
- 0.25
- 5
0.25
5
Channel On
Leakage Current
ID(on)
V+ = 16.5 V, V- = - 16.5 V
VD = VS = ± 15.5 V
Room
Full
± 0.1
- 0.4
- 40
0.4
40
- 0.4
- 10
0.4
10
Digital Control
Input Current, VIN Low
IIL
VIN under test = 0.8 V
Full
0.005
- 0.5
0.5
- 0.5
0.5
A
Input Current, VIN High
IIH
VIN under test = 2.4 V
Full
0.005
- 0.5
0.5
- 0.5
0.5
Input Capacitancee
CIN
f = 1 MHz
Room
5
pF
Dynamic Characteristics
Turn-On Time
tON
RL = 300 , CL = 35 pF
VS = ± 10 V, see figure 2
Room
Full
68
105
127
105
116
ns
Turn-Off Time
tOFF
Room
Full
42
80
94
80
90
Break-Before-Make
Time Delay
tD
DG413HS only, VS = 10 V
RL = 300 , CL = 35 pF
Room
20
Charge Injectione
QVg = 0 V, Rg = 0 , CL = 10 nF
Room
22
pC
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