參數(shù)資料
型號: DG412DY
廠商: HARRIS SEMICONDUCTOR
元件分類: 運動控制電子
英文描述: Monolithic Quad SPST, CMOS Analog Switches
中文描述: QUAD 1-CHANNEL, SGL POLE SGL THROW SWITCH, PDSO16
文件頁數(shù): 4/11頁
文件大?。?/td> 136K
代理商: DG412DY
4
Source OFF Leakage Current,
I
S(OFF)
Drain OFF Leakage Current,
I
D(OFF)
V+ = 16.5V, V- = -16.5V, V
D
=
±
15.5V, V
S
=
15.5V
25
-0.25
±
0.1
0.25
nA
Full
-5
-
+5
nA
25
-0.25
±
0.1
0.25
nA
Full
-5
-
+5
nA
Channel ON Leakage Current,
I
D(ON)
+ I
S(ON)
V+ = 16.5V, V- = -16.5V, V
S
= V
D
=
±
15.5V
25
-0.4
±
0.1
0.4
nA
Full
-10
-
+10
nA
POWER SUPPLY CHARACTERISTICS
Positive Supply Current, I+
V+ = 16.5V, V- = -16.5V, V
IN
= 0V or 5V
25
-
0.0001
1
μ
A
85
-
5
μ
A
Negative Supply Current, I-
25
-1
-0.0001
-
μ
A
85
-5
-
-
μ
A
Logic Supply Current, I
L
25
-
0.0001
1
μ
A
85
-
-
5
μ
A
Ground Current, I
GND
25
-1
-0.0001
-
μ
A
85
-5
-
-
μ
A
Electrical Specifications
(Single Supply) Test Conditions: V+ = +12V, V- = 0V, V
L
= 5V, V
IN
= 2.4V, 0.8V (Note 3),
Unless Otherwise Specified
PARAMETER
TEST CONDITIONS
TEMP
(
o
C)
(NOTE 4)
MIN
(NOTE 5)
TYP
(NOTE 4)
MAX
UNITS
DYNAMIC CHARACTERISTICS
Turn-ON Time, t
ON
R
L
= 300
, C
L
= 35pF,
V
S
= 8V, (Figure 1)
25
-
175
250
ns
85
-
-
315
ns
Turn-OFF Time, t
OFF
25
-
95
125
ns
85
-
-
140
ns
Break-Before-Make Time Delay
DG413 Only, R
L
= 300
,
C
L
= 35pF, V
S
= 8V
C
L
= 10nF, V
G
= 6.0V, R
G
= 0
25
-
25
-
ns
Charge Injection, Q
25
-
25
-
pC
ANALOG SWITCH CHARACTERISTICS
Analog Signal Range, V
ANALOG
Full
0
-
12
V
Drain-Source ON Resistance,
r
DS(ON)
I
S
= -10mA, V
D
= 3V, 8V
V+ = 10.8V
25
-
40
80
Full
-
-
100
Electrical Specifications
Test Conditions: V+ = +15V, V- = -15V, V
L
= 5V, V
IN
= 2.4V, 0.8V (Note 3),
Unless Otherwise Specified
(Continued)
PARAMETER
TEST CONDITIONS
TEMP
(
o
C)
(NOTE 4)
MIN
(NOTE 5)
TYP
(NOTE 4)
MAX
UNITS
±
DG411, DG412, DG413
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參數(shù)描述
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