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參數(shù)資料
| 型號： | DG4157DN-T1-E4 |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | 多路復(fù)用及模擬開關(guān) |
| 英文描述： | 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, PDSO6 |
| 封裝： | ROHS COMPLIANT, MINI, QFN-6 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 185K |
| 代理商： | DG4157DN-T1-E4 |
www.vishay.com
2
Document Number: 68800
S09-1725-Rev. E, 07-Sep-09
Vishay Siliconix
DG4157
Notes:
a. Signals on A, or B or S exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 3.1 mW/°C above 70 °C.
d. Derate 2.0 mW/°C above 70 °C.
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
Unit
Reference V+ to GND
- 0.3 to + 6
V
S, A, Ba
- 0.3 to (V+ + 0.3)
Continuous Current (Any terminal)
± 200
mA
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
± 400
Storage Temperature
D Suffix
- 65 to 150
°C
Power Dissipation (Packages)b
SC-70-6Lc
250
mW
miniQFN-6Ld
160
SPECIFICATIONS
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 3.0 V, VIN = 0 V or V+
e
Temp.a
Limits
- 40 °C to 85 °C
Unit
Min.b
Typ.c
Max.b
DC Characteristics
On Resistance
RON
V+ = 2.7 V, B0 or B1 = 1.5 V, IO = 100 mA
Room
1.7
2.5
Ω
Full
3
V+ = 4.5 V, B0 or B1 = 3.5 V, IO = 100 mA
Room
0.95
1.2
Full
1.4
On Resistance Flatness
RFLATNESS
V+ = 2.7 V, B0 or B1 = 0.75 V, 1.5 V,
IO = 100 mA
Room
0.2
V+ = 4.5 V, B0 or B1 = 1 V, 3.5 V,
IO = 100 mA
Room
0.14
0.3
Full
0.4
On Resistance Match
ΔR
ON
V+ = 2.7 V, B0 or B1 = 1.5 V,
IO = 100 mA
Room
0.04
V+ = 4.5 V, B0 or B1 = 3.5 V,
IO = 100 mA
Room
0.05
0.12
Full
0.15
Switch Off Leakage Current
IOFF
V+ = 5.5 V, A = 1 V, 4.5 V
B0 or B1 = 4.5 V, 1 V or Floating
Room
- 2
2
nA
Full
- 20
20
Switch On Leakage Current
ION
Room
- 4
4
Full
- 40
40
Digital Control
Input, High Voltage
VINH
V+ = 2.7 V to 5.5 V
Full
1.4
V
Input, Low Voltage
VINL
Full
0.4
Input Current
IINH, IINL
VIN = 0 or V+
Full
- 1
1
A
Power Supply
Power Supply Range
V+
Full
1.65
5.5
V
Quiescent Supply Current
I+
V+ = 5.5 V, VIN = 0 V, 5.5 V
Room
0.05
0.5
A
Full
1
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