參數(shù)資料
型號(hào): DG418BDY-E3
廠商: Vishay Siliconix
文件頁(yè)數(shù): 11/16頁(yè)
文件大小: 0K
描述: IC ANALOG SWITCH SPDT 8SOIC
標(biāo)準(zhǔn)包裝: 500
功能: 開(kāi)關(guān)
電路: 1 x SPST - NO
導(dǎo)通狀態(tài)電阻: 35 歐姆
電壓電源: 單/雙電源
電壓 - 電源,單路/雙路(±): 12V,±15V
電流 - 電源: 1µA
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 8-SOICN
包裝: 管件
www.vishay.com
4
Document Number: 72107
S09-1261-Rev. D, 13-Jul-09
Vishay Siliconix
DG417B, DG418B, DG419B
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
VL = 5 V, VIN = 2.4 V, 0.8 V
f
Temp.b
Typ.c
A Suffix
- 55 °C to 125 °C
D Suffix
- 40 °C to 85 °C
Unit
Min.d
Max.d
Min.d
Maxd.
Dynamic Characteristics
Source Off Capacitancee
CS(off)
f = 1 MHz, VS = 0 V
Room
12
pF
Drain Off Capacitancee
CD(off)
DG417B
DG418B
Room
12
Channel On Capacitancee
CD(on)
f = 1 MHz, VS = 0 V
DG417B
DG418B
Room
50
DG419B
Room
57
Power Supplies
Positive Supply Current
I+
V+ = 16.5 V, V- = - 16.5 V
VIN = 0 or 5 V
Room
Full
0.001
1
5
1
5
A
Negative Supply Current
I-
Room
Full
- 0.001
- 1
- 5
- 1
- 5
Logic Supply Current
IL
Room
Full
0.001
1
5
1
5
Ground Current
IGND
Room
Full
- 0.001
- 1
- 5
- 1
- 5
SPECIFICATIONSa
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V
VL = 5 V, VIN = 2.4 V, 0.8 V
f
Temp.b
Typ.c
A Suffix
- 55 °C to 125 °C
D Suffix
- 40 °C to 85 °C
Unit
Min.d
Max.d
Min.d
Max.d
Analog Switch
Analog Signal Rangee
VANALOG
Full
0
12
0
12
V
Drain-Source
On-Resistance
RDS(on)
IS = - 10 mA, VD = 3.8 V
V+ = 10.8 V
Room
Full
26
35
52
35
45
Ω
Dynamic Characteristics
Turn-On Time
tON
RL = 300 Ω, CL = 35 pF
VS = 8 V, See Switching
Time Test Circuit
Room
Full
100
125
155
125
143
ns
Turn-Off Time
tOFF
Room
Full
38
66
73
66
69
Break-Before-Make
Time Delay
tD
RL = 300 Ω, CL = 35 pF
DG419B Room
62
25
Transition Time
tTRANS
RL = 300 Ω, CL = 35 pF
VS1 = 0 V, 8 V, VS2 = 8 V, 0 V
Room
Full
95
119
153
119
141
Charge Injection
Q
CL = 10 nF, Vgen = 0 V, Rgen = 0 Ω
Room
18
pC
Power Supplies
Positive Supply Current
I+
V+ = 13.2 V, VL = 5.25 V
VIN = 0 or 5 V
Room
Full
0.001
1
5
1
5
A
Negative Supply Current
I-
Room
- 0.001
- 1
- 5
- 1
- 5
Logic Supply Current
IL
Room
0.001
1
5
1
5
Ground Current
IGND
Room
- 0.001
- 1
- 5
-1
- 5
SPECIFICATIONSa
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