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參數(shù)資料
| 型號(hào)： | DG419DJ-E3 |
| 廠商： | Vishay Siliconix |
| 文件頁(yè)數(shù)： | 2/16頁(yè) |
| 文件大?。?/td> | 0K |
| 描述： | IC ANALOG SWITCH CMOS 8DIP |
| 標(biāo)準(zhǔn)包裝： | 500 |
| 功能： | 開關(guān) |
| 電路： | 1 x SPDT |
| 導(dǎo)通狀態(tài)電阻： | 40 歐姆 |
| 電壓電源： | 單/雙電源 |
| 電壓 - 電源，單路/雙路(±)： | 12V，±15V |
| 電流 - 電源： | 1nA |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 通孔 |
| 封裝/外殼： | 8-DIP（0.300"，7.62mm） |
| 供應(yīng)商設(shè)備封裝： | 8-迷你型 DIP |
| 包裝： | 管件 |
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www.vishay.com
10
Document Number: 70051
S10-1528-Rev. G, 19-Jul-10
Vishay Siliconix
DG417, DG418, DG419
APPLICATIONS
Micropower UPS Transfer Switch
When VCC drops to 3.3 V, the DG417 changes states,
closing SW1 and connecting the backup cell, as shown in
Figure 10. D1 prevents current from leaking back towards the
rest of the circuit. Current consumption by the CMOS analog
switch is around 100 pA; this ensures that most of the power
available is applied to the memory, where it is really needed.
In the stand-by mode, hundreds of A are sufficient to retain
memory data.
When the 5 V supply comes back up, the resistor divider
senses the presence of at least 3.5 V, and causes a new
change of state in the analog switch, restoring normal
operation.
Programmable Gain Amplifier
The DG419, as shown in figure 11, allows accurate gain
selection in a small package. Switching into virtual ground
reduces distortion caused by RDS(on) variation as a function
of analog signal amplitude.
GaAs FET Driver
The DG419, as shown in figure 12 may be used as a GaAs
FET driver. It translates a TTL control signal into - 8 V, 0 V
level outputs to drive the gate.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70051.
Figure 11. Micropower UPS Circuit
GND
IN
D
V-
3 V Li Cell
Memory
DG417
(5 V)
V+
S
+
–
SW1
VL
VSENSE
R1
453 k
D1
VCC
R2
383 k
Figure 12. Programmable Gain Amplifier
DG419
+
-
IN
R1
R2
VIN
VOUT
D
S1
S2
Figure 13. GaAs FET Driver
DG419
5 V
VOUT
D
V-
GND
S2
S1
VL
V+
+ 5 V
- 8 V
GaAs FET
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DG419DK | 功能描述:模擬開關(guān) IC RoHS:否 制造商:Texas Instruments 開關(guān)數(shù)量:2 開關(guān)配置:SPDT 開啟電阻（最大值）:0.1 Ohms 切換電壓（最大）: 開啟時(shí)間（最大值）: 關(guān)閉時(shí)間（最大值）: 工作電源電壓:2.7 V to 4.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DSBGA-16 |
| DG419DY | 功能描述:模擬開關(guān) IC SPDT Analog Switch RoHS:否 制造商:Texas Instruments 開關(guān)數(shù)量:2 開關(guān)配置:SPDT 開啟電阻（最大值）:0.1 Ohms 切換電壓（最大）: 開啟時(shí)間（最大值）: 關(guān)閉時(shí)間（最大值）: 工作電源電壓:2.7 V to 4.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DSBGA-16 |
| DG419DY | 制造商:Vishay Siliconix 功能描述:IC SWITCH SPDT SMD SOIC8 419 |
| DG419DY.TG002 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Maxim Integrated Products 功能描述: |
| DG419DY+ | 功能描述:模擬開關(guān) IC SPDT Precision CMOS RoHS:否 制造商:Texas Instruments 開關(guān)數(shù)量:2 開關(guān)配置:SPDT 開啟電阻（最大值）:0.1 Ohms 切換電壓（最大）: 開啟時(shí)間（最大值）: 關(guān)閉時(shí)間（最大值）: 工作電源電壓:2.7 V to 4.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DSBGA-16 |
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