參數(shù)資料
型號(hào): DG419LDQ-T1-E3
廠商: Vishay Siliconix
文件頁(yè)數(shù): 11/15頁(yè)
文件大?。?/td> 0K
描述: IC ANALOG SWITCH CMOS 8MSOP
標(biāo)準(zhǔn)包裝: 1
功能: 開(kāi)關(guān)
電路: 1 x SPDT
導(dǎo)通狀態(tài)電阻: 20 歐姆
電壓電源: 單/雙電源
電壓 - 電源,單路/雙路(±): 2.7 V ~ 12 V,± 3 V ~ 6 V
電流 - 電源: 1µA
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 8-TSSOP,8-MSOP(0.118",3.00mm 寬)
供應(yīng)商設(shè)備封裝: 8-MSOP
包裝: 標(biāo)準(zhǔn)包裝
其它名稱: DG419LDQ-T1-E3DKR
Document Number: 71763
S13-1856-Rev. G, 19-Aug-13
www.vishay.com
5
Vishay Siliconix
DG417L, DG418L, DG419L
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
Notes:
a. Leakage parameters are guaranteed by worst case test condition and not subject to production test.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (Single Supply 3 V)
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 3 V, V- = 0 V
VL = 3 V, VIN = 2 V, 0.4 V
f
Temp.b
Typ.c
A Suffix Limits
- 55 °C to 125 °C
D Suffix Limits
- 40 °C to 85 °C
Unit
Min.d
Max.d
Min.d
Max.d
Analog Switch
Analog Signal Rangee
VANALOG
Full
0
3
0
3
V
On-Resistance
RON
V+ = 2.7 V, V- = 0 V
INO, INC = 5 mA, VCOM = 0.5 V, 2.2 V
Room
Full
47
70
80
70
75
Switch Off
Leakage Currenta
INO(off)
INC(off)
V+ = 3.3 , V- = 0 V
VCOM = 1, 2 V, VNO, VNC = 2, 1 V
Room
Full
- 1
- 15
1
15
- 1
- 10
1
10
nA
ICOM(off)
Room
Full
- 1
- 15
1
15
- 1
- 10
1
10
Channel On
Leakage Currenta
ICOM(on)
V+ = 3.3 V, V- = 0 V
VNO, VNC = VCOM = 1 V, 2 V
Room
Full
- 1
- 15
1
15
- 1
- 10
1
10
Digital Control
Input Currenta
IINL or IINH
Full
0.005
- 1.5
1.5
- 1
1
A
Dynamic Characteristics
Turn-On Time
tON
RL = 300 , CL = 35 pF
VNO, VNC = 1.5 V, see figure 2
Room
Full
65
75
95
75
85
ns
Turn-Off Time
tOFF
Room
Full
26
41
45
41
43
Break-Before-Make Time
Delay
tD
DG419L only, VNO, VNC = 1.5 V
RL = 300 , CL = 35 pF
Room
33
Charge Injectione
QINJ
Vg = 0 V, Rg = 0 , CL = 10 nF
Room
1
pC
Off-Isolatione
OIRR
RL = 50 , CL = 5 pF , f = 1 MHz
Room
- 71
dB
Channel-to-Channel
Crosstalke
XTALK
Room
- 77
Source Off Capacitancee
CNO(off)
CNC(off)
f = 1 MHz
Room
5.6
pF
Channel On Capacitancee
CD(on)
Room
16
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