參數(shù)資料
型號： DG429A
廠商： Intersil Corporation
英文描述： 2 CHANNEL DRIVERS WITH SPST AND DPST FET SWITCHES
中文描述： 2通道驅(qū)動器，SPST和DPST能夠FET開關(guān)
文件頁數(shù)： 6/11頁
文件大?。?/td> 131K
代理商： DG429A
DG428/429
Vishay Siliconix
www.vishay.com
S FaxBack 408-970-5600
5-4
Document Number: 70063
S-52433—Rev. J, 06-Sep-99
SPECIFICATIONSa
Test Conditions
Unless Otherwise Specified
A Suffix
–55 to 125
_C
D Suffix
–40 to 85
_C
Parameter
Symbol
V+ = 15 V, V– = –15 V, WR = 0, RS = 2.4
V, VIN = 2.4 V, 0.8 Vf
Tempb
Typc
Mind
Maxd
Mind
Maxd
Unit
Minimum Input Timing Requirements
Write Pulse Width
tW
SFi
2
Full
100
AX, EN Data Set Up time
tS
See Figure 2
Full
100
ns
AX, EN Data Hold Time
tH
Full
10
ns
Reset Pulse Width
tRS
VS = 5 V, See Figure 3
Full
100
Power Supplies
Positive Supply Current
I+
VEN =0V VA =0 RS =5V
Room
20
100
mA
Negative Supply Current
I–
VEN = 0 V, VA = 0, RS = 5 V
Room
–0.001
–5
mA
SPECIFICATIONSa FOR SINGLE SUPPLY
Test Conditions
Unless Otherwise Specified
A Suffix
–55 to 125
_C
D Suffix
–40 to 85
_C
Parameter
Symbol
V+ = 12 V, V– = 0 V, WR = 0
RS = 2.4 V, VIN = 2.4 V, 0.8 Vf
Tempb
Typc
Mind
Maxd
Mind
Maxd
Unit
Analog Switch
Analog Signal Rangee
VANALOG
Full
0
12
0
12
V
Drain-Source
On-Resistance
rDS(on)
VD = +10 V, VAL = 0.8 V
IS = –500 mA, VAH = 2.4 V
Room
80
150
W
rDS(on) Matchg
DrDS(on)
0 V < VS < 10 V
IS = –1 mA
Room
5
%
Source Off
Leakage Current
IS(off)
VS = 0 V, 10 V, VD = 10 V, 0 V
VEN = 0 V
Room
Full
"0.03
–0.5
–50
0.5
50
–0.5
–50
0.5
50
A
Drain Off
ID(off)
VD = 0 V, 10 V
VS =10V 0V
DG428
Room
Full
"0.07
–1
–100
1
100
–1
–100
1
100
A
Drain Off
Leakage Current
ID(off)
VS = 10 V, 0 V
VEN = 0 V
DG429
Room
Full
"0.05
–1
–50
1
50
–1
–50
1
50
nA
Drain On
ID(on)
VS = VD = 0 V, 10 V
VEN = 2.4 V
DG428
Room
Full
"0.07
–1
–100
1
100
–1
–100
1
100
Drain On
Leakage Current
ID(on)
VEN
2.4 V
VAL = 0.8 V
VAH = 2.4 V
DG429
Room
Full
"0.05
–1
–50
1
50
–1
–50
1
50
Digital Control
Logic Input Current
It V lt
Hi h
IAH
VA = 2.4 V
Full
1
A
gp
Input Voltage High
IAH
VA = 12 V
Full
1
mA
Logic Input Current
Input Voltage Low
IAL
VEN = 0 V, 2.4 V, VA = 0 V
RS = 0 V, WR = 0 V
Full
–1
mA
Dynamic Characteristics
Transition Time
tTRANS
S1 = 10 V/2 V, S8 = 2 V/ 10 V
See Figure 5
Room
Full
160
280
350
280
350
Break-Before-Make
Interval
tOPEN
See Figure 4
Room
Full
40
25
10
25
10
ns
Enable and Write
Turn-On Time
tON(EN, WR)
S1 =5 V
See Figures 6 and 7
Room
Full
110
300
400
300
400
ns
Enable and Reset
Turn-Off Time
tOFF(EN, RS)
S1 =5 V
See Figures 6 and 8
Room
Full
70
300
400
300
400
Charge Injection
Q
VGEN = 6 V, RGEN = 0 W
CL = 1 nF, See Figure 9
Room
4
pC
Off Isolation
OIRR
VEN = 0 V, RL = 300 W, CL = 15 pF
VS = 7 VRMS, f = 100 kHz
Room
–75
dB
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