參數(shù)資料
型號： DG9232DY-E3
廠商： Vishay Siliconix
文件頁數(shù)： 5/12頁
文件大?。?/td> 0K
描述： IC SWITCH DUAL SPST 8SOIC
標準包裝： 500
功能： 開關
電路： 2 x SPST - NC
導通狀態(tài)電阻： 30 歐姆
電壓電源： 單電源
電壓 - 電源，單路/雙路(±)： 2.7 V ~ 5 V
電流 - 電源： 1µA
工作溫度： -40°C ~ 85°C
安裝類型： 表面貼裝
封裝/外殼： 8-SOIC（0.154"，3.90mm 寬）
供應商設備封裝： 8-SOICN
包裝： 管件
www.vishay.com
2
Document Number: 70837
S11-0984–Rev. F, 23-May-11
Vishay Siliconix
DG9232, DG9233
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 6.5 mW/°C above 70 °C.
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
d. Guarantee by design, nor subjected to production test.
e. VIN = input voltage to perform proper function.
f. Difference of min and max values.
g. Guaranteed by 5 V leakage tests, not production tested.
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
Unit
Reference V+ to GND
- 0.3 to + 13
V
IN, COM, NC, NOa
- 0.3 to (V+ + 0.3)
Continuous Current (Any terminal)
± 20
mA
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
± 40
ESD (Method 3015.7)
> 2000
V
Storage Temperature
D suffix
- 65 to 125
°C
Power Dissipation (Packages)b
8-pin narrow body SOICc
400
mW
SPECIFICATIONS (V+ = 3 V)
Parameter
Symbol
Test Conditions
Otherwise Unless Specified
V+ = 3 V, ± 10 %, VIN = 0.8 V or 2.4 V
e
Temp.a
D Suffix
- 40 °C to 85 °C
Unit
Min.c
Typ.b
Max.c
Analog Switch
Analog Signal Ranged
VANALOG
Full
0
3
V
Drain-Source On-Resistance
RDS(on)
VNO or VNC = 1.5 V, V+ = 2.7 V
ICOM = 5 mA
Room
Full
30
50
80
RDS(on) Match
d
RDS(on)
VNO or VNC = 1.5 V
Room
0.4
2
RDS(on) Flatness
d
RDS(on)
Flatness
VNO or VNC = 1 and 2 V
Room
4
8
NO or NC Off Leakage Currentg
INO/NC(off)
VNO or VNC = 1 V/2 V, VCOM = 2 V/1 V
Room
Full
- 100
- 5000
5
100
5000
pA
COM Off Leakage Currentg
ICOM(off)
VCOM = 1 V/2 V, VNO or VNC = 2 V/1 V
Room
Full
- 100
- 5000
5
100
5000
Channel-On Leakage Currentg
ICOM(on)
VCOM = VNO or VNC = 1 V/2 V
Room
Full
- 200
- 10000
10
200
10000
Digital Control
Input Current
IINL or IINH
Full
1
A
Dynamic Characteristics
Turn-On Time
tON
VNO or VNC = 1.5 V
Room
Full
50
120
200
ns
Turn-Off Time
tOFF
Room
Full
20
50
120
Charge Injectiond
QINJ
CL = 1 nF, VGEN = 0 V, RGEN = 0
Room
1
5
pC
Off-Isolation
OIRR
RL = 50 , CL = 5 pF, f = 1 MHz
Room
- 74
dB
Crosstalk
XTALK
Room
- 90
NC and NO Capacitance
CS(off)
f = 1 MHz
Room
7
pF
Channel-On Capacitance
CCOM(on)
Room
20
COM-Off Capacitance
CCOM(off)
Room
13
Power Supply
Positive Supply Range
V+
2.7
12
V
Power Supply Current
I+
V+ = 3.3 V, VIN = 0 or 3.3 V
1A
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