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參數(shù)資料
| 型號(hào)： | DG9422DV-T1-E3 |
| 廠商： | Vishay Siliconix |
| 文件頁(yè)數(shù)： | 10/14頁(yè) |
| 文件大?。?/td> | 0K |
| 描述： | IC SWITCH SNGL SPST 5V 6TSOP |
| 標(biāo)準(zhǔn)包裝： | 1 |
| 功能： | 開關(guān) |
| 電路： | 1 x SPST- NO |
| 導(dǎo)通狀態(tài)電阻： | 3 歐姆 |
| 電壓電源： | 單/雙電源 |
| 電壓 - 電源，單路/雙路(±)： | 2.7 V ~ 12 V，± 2.7 V ~ 6 V |
| 電流 - 電源： | -1µA，1µA |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 6-TSOP（0.065"，1.65mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 6-TSOP |
| 包裝： | 標(biāo)準(zhǔn)包裝 |
| 其它名稱： | DG9422DV-T1-E3DKR |
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Document Number: 70679
S11-1429-Rev. G, 18-Jul-11
www.vishay.com
5
Vishay Siliconix
DG9421, DG9422
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
g. Leakage parameters are guaranteed by worst case test conditions and not subject to test.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONSa (Single Supply 3 V)
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 3 V, V- = 0 V, VIN = 0.4 V
f
Tempb
Limits
- 40 °C to 85 °C
Unit
Min.d
Typ.c
Max.d
Analog Switch
Analog Signal Rangee
VANALOG
Full
0
3
V
Drain-Source
On-Resistance
RDS(on)
V+ = 2.7 V, V- = 0 V
IS = 5 mA, VD = 0.5, 2.2 V
Room
Full
7.3
8.8
10.1
Switch Off
Leakage Currentg
IS(off)
V+ = 3.3 V, V- = 0 V
VS = 1, 2 V, VD = 2, 1 V
Room
Full
- 1
- 10
1
10
nA
ID(off)
Room
Full
- 1
- 10
1
10
Channel-On
Leakage Currentg
ID(on)
V+ = 3.3 V, V- = 0 V
VD = VS = 1, 2 V
Room
Full
- 1
- 10
1
10
Digital Control
Input Current, VIN Low
e
IIL
VIN Under Test = 0.4 V
Full
- 1
0.02
1
A
Input Current, VIN High
e
IIH
VIN Under Test = 2.4 V
Full
- 1
0.02
1
Dynamic Characteristics
Turn-On Time
tON
RL = 300 , CL = 35 pF, VS = 1.5 V
see figure 2
Room
Full
90
110
125
ns
Turn-Off Time
tOFF
Room
Full
32
84
99
Charge Injectione
Q
Vg = 0 V, Rg = 0 , CL = 1 nF
Room
31
pC
Off-Isolatione
OIRR
RL = 50 , CL = 5 pF , f = 1 MHz
Room
- 60
dB
Source Off Capacitancee
CS(off)
f = 1 MHz
Room
35
pF
Drain Off Capacitancee
CD(off)
Room
34
Channel On Capacitancee
CD(on)
Room
77
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