參數(shù)資料
型號: DGS20-018AS
廠商: IXYS CORP
元件分類: 參考電壓二極管
英文描述: Gallium Arsenide Schottky Rectifier
中文描述: 23 A, 180 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB
封裝: PLASTIC PACKAGE-2
文件頁數(shù): 1/2頁
文件大小: 53K
代理商: DGS20-018AS
2001 IXYS All rights reserved
1 - 2
DGS 20-018AS
V
RSM
V
V
RRM
V
Type
180
180
DGS 20-018AS
Preliminary Data
A = Anode, C = Cathode , TAB = Cathode
A
TO-263 AB
A
C (TAB)
A
C
1
Symbol
Conditions
Maximum Ratings
I
FAV
I
FAV
T
C
= 25
°
C; DC
T
C
= 90
°
C; DC
23
17
A
A
I
FSM
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
30
A
T
VJ
T
stg
-55...+175
-55...+150
°
C
°
C
P
tot
T
C
= 25
°
C
48
W
Features
G
Low forward voltage
G
Very high switching speed
G
Low junction capacity of GaAs
- low reverse current peak at turn off
G
Soft turn off
G
Temperature independent switching
behaviour
G
High temperature operation capability
G
Epoxy meets UL 94V-0
Applications
G
MHz Switched mode power supplies
(SMPs)
G
Small size SMPs
G
High frequency converters
G
Resonant converters
Pulse test:
c
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, Conditions and dimensions.
Gallium Arsenide Schottky Rectifier
I
FAV
V
RRM
C
Junction
= 33 pF
= 23 A
= 180 V
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
c
T
VJ
= 25°C V
R
= V
RRM
T
VJ
= 125°C V
R
= V
RRM
2.0
mA
mA
2.0
V
F
I
F
= 7.5 A;
I
F
= 7.5 A;
T
VJ
= 125°C
T
VJ
= 25°C
0.8
0.8
V
V
1.0
C
J
V
R
= 100 V; T
VJ
= 125°C
33
pF
R
thJC
3.1
K/W
Weight
2
g
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