參數(shù)資料
型號: DGT305RE
英文描述: GTO Thyristors - Reverse Blocking - Disc / Puk Devices
中文描述: GTO晶閘管-反向阻斷-光盤/北辰設(shè)備
文件頁數(shù): 12/14頁
文件大?。?/td> 1188K
代理商: DGT305RE
DGT305RE
12/13
www.dynexsemi.com
Fig.30 General switching waveforms
A
VD
0.9VD
0.1VD
td
tr
tgt
IT
VDP
0.9IT
ITAIL
dVD/dt
VD
VDM
G
tgs
tgf
tw1
VFG
IFG
0.1IFG
dIFG/dt
0.1IGQ
QGQ
0.5IGQM
IGQM
VRG
V(RG)BR
IG(ON)
tgq
Recommended gate conditions:
I
TCM
= 600A
I
FG
= 20A
I
G(ON)
= 2A d.c.
t
w1(min)
= 4.5μs
I
GQM
= 130A
di
GQ
/dt = 15A/μs
Q
GQ
= 900μC
V
RG(min)
= 2V
V
RG(max)
= 16V
These are recommended Dynex Semiconductor conditions. Other conditions are permitted
according to users gate drive specifications.
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DH0035G PIN DIODE DRIVER|BIPOLAR|QUAD|12PIN|METAL
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