參數(shù)資料
型號(hào): DIM150CHS17-E
英文描述: IGBT Modules - Half Bridge
中文描述: IGBT模塊-半橋
文件頁(yè)數(shù): 4/8頁(yè)
文件大?。?/td> 170K
代理商: DIM150CHS17-E
DIM150CHS17-E000
4/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Units
ns
ns
mJ
ns
ns
mJ
μ
C
μ
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
-
Typ.
750
200
30
275
100
50
1.6
37.5
170
15
Min.
-
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 150A
V
GE
=
±
15V
V
CE
= 900V
R
G(ON)
= R
G(OFF)
= 10
L ~ 70nH
I
F
= 150A, V
R
= 900V,
dI
F
/dt = 2100A/
μ
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
g
Q
rr
I
rr
E
REC
T
case
= 125C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
μ
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
Typ.
850
200
45
350
100
65
60
180
26
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 150A
V
GE
=
±
15V
V
CE
= 900V
R
G(ON)
= R
G(OFF)
= 10
L ~ 70nH
I
F
= 150A, V
R
= 900V,
dI
F
/dt = 2100A/
μ
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
Note:
Switching Characteristic measurements taken using standard driver circuit conditions.
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