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參數(shù)資料
| 型號： | DIM150WHS17-E |
| 英文描述： | IGBT Modules - Half Bridge |
| 中文描述： | IGBT模塊-半橋 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 170K |
| 代理商： | DIM150WHS17-E |
DIM150CHS17-E000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
3/8
Test Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125C
V
GE
=
±
20V, V
CE
= 0V
I
C
= 6mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 150A
V
GE
= 15V, I
C
= 150A, , T
case
= 125C
DC
t
p
= 1ms
I
F
= 150A
I
F
= 150A, T
case
= 125C
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
-
T
j
= 125C, V
CC
= 900V,
I
1
t
p
≤
10
μ
s,
V
CE(max)
= V
CES
– L*. di/dt
I
2
IEC 60747-9
Parameter
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
Input capacitance
Module inductance
Internal transistor resistance - per arm
Short circuit. I
SC
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise.
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(sat)
I
F
I
FM
V
F
C
ies
L
M
R
INT
SC
Data
Units
mA
mA
nA
V
V
V
A
A
V
V
nF
nH
m
A
A
Max.
0.5
2.5
200
6.4
2.4
3.0
150
300
2.3
2.4
-
-
-
-
-
Typ.
-
-
-
5.8
2.0
2.3
-
-
1.9
2.0
13
20
0.6
650
560
Min.
-
-
-
5.2
-
-
-
-
-
-
-
-
-
-
-
Note:
L* is the circuit inductance + L
M
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