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參數(shù)資料
| 型號： | DIM1600FSM17-A |
| 英文描述： | IGBT Modules - Single Switch |
| 中文描述： | IGBT模塊-單開關(guān) |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 220K |
| 代理商： | DIM1600FSM17-A |
DIM1600FSM12-A000
6/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
TYPICAL CHARACTERISTICS
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
0
50
100
150
200
250
300
350
400
0
400
800
1200
1600
2000
Collector current, I
C
- (A)
S
s
E
on
E
off
E
rec
T
c
= 125
C,
V
cc
= 600V,
R
g
= 1.5 Ohms
0
50
100
150
200
250
300
350
400
1
1.5
2
2.5
3
3.5
Gate resistance, R
g
- (Ohms)
S
s
E
on
E
off
E
rec
T
c
= 125
C,
V
cc
= 600V,
I
C
= 1600A
0
400
800
1200
1600
2000
2400
2800
3200
0
0.5
1.0
Collector-emitter voltage, V
ce
- (V)
1.5
2.0
2.5
3.0
3.5
4.0
C
C
V
GE
= 10V
V
GE
= 12V
V
GE
= 15V
V
GE
= 20V
Common emitter
T
case
= 25
C
V
is measured at power busbars
and not the auxiliary terminals
0
400
800
1200
1600
2000
2400
2800
3200
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Collector-emitter voltage, V
ce
- (V)
C
C
V
GE
= 10V
V
GE
= 12V
V
GE
= 15V
V
GE
= 20V
Common emitter
T
case
= 125
C
V
is measured at power busbars
and not the auxiliary terminals
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DIM1600FSM17A00 | 制造商:Dynex Semiconductor 功能描述:POWER IGBT TRANSISTOR |
| DIM1600FSM17-A000 | 制造商:n/a 功能描述:IGBT Module |
| DIM1600FSM17-A000_10 | 制造商:DYNEX 制造商全稱:Dynex Semiconductor 功能描述:Single Switch IGBT Module |
| DIM1600FSS12A00 | 制造商:Dynex Semiconductor 功能描述:POWER IGBT TRANSISTOR |
| DIM1600FSS12-A000 | 制造商:DYNEX 制造商全稱:Dynex Semiconductor 功能描述:Single Switch IGBT Module |
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