參數(shù)資料
型號: DIM400GCM33-A
英文描述: IGBT Modules - Chopper
中文描述: IGBT模塊-斬波
文件頁數(shù): 7/10頁
文件大?。?/td> 265K
代理商: DIM400GCM33-A
DIM400GCM33-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
7/10
Fig. 7 Diode typical forward characteristics
Fig. 8 Reverse bias safe operating area
Fig. 9 Diode reverse bias safe operating area
Fig. 10 Transient thermal impedance
0
100
200
300
400
500
600
700
800
0
0.5
1
1.5
2
2.5
3
3.5
4
Forward voltage, V
F
- (V)
F
F
T
j
= 25
C
T
j
= 125
C
V
F
is measured at power busbars
and not the auxiliary terminals
0
100
200
300
400
500
600
700
800
900
0
500
1000
Collector emitter voltage, V
ce
- (V)
1500
2000
2500
3000
3500
C
C
T
case
= 125C
V
ge
= ±15V
R
g(min)
= 4.7
Module
Chip
0
100
200
300
400
500
600
700
0
500
1000
1500
2000
2500
3000
3500
Reverse voltage, V
R
- (V)
R
r
0.1
0.001
10
100
0.01
1
0.1
10
Pulse width, t
p
- (s)
T
t
°
C
IGBT
Diode
R
(C/KW)
τ
i
(ms)
R
(C/KW)
τ
i
(ms)
1
0.89
0.13
1.79
0.13
2
5.63
5.80
11.26
5.80
3
7.88
48.03
15.77
48.03
4
9.56
248.53
19.11
248.53
Diode
Transistor
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