參數(shù)資料
型號: DIM400GDM33-A
英文描述: IGBT Modules - Dual Switch
中文描述: IGBT模塊-雙開關(guān)
文件頁數(shù): 5/10頁
文件大?。?/td> 265K
代理商: DIM400GDM33-A
DIM400GCM33-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
5/10
Units
ns
ns
mJ
ns
ns
mJ
μ
C
μ
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
-
Typ.
1300
200
350
570
300
550
5
180
240
230
Min.
-
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 400A
V
GE
=
±
15V
V
CE
= 1800V
R
G(ON)
= R
G(OFF)
= 4.7
C
ge
= 68nF
L ~ 100nH
I
F
= 400A, V
R
= 1800V,
dI
F
/dt = 1750A/
μ
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
ELECTRICAL CHARACTERISTICS - IGBT ARM ONLY
T
case
= 25C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
g
Q
rr
I
rr
E
rec
T
case
= 125C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
μ
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
Typ.
1450
250
430
500
350
800
340
320
430
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 400A
V
GE
=
±
15V
V
CE
= 1800V
R
G(ON)
= R
G(OFF)
= 4.7
C
ge
= 68nF
L ~ 100nH
I
F
= 400A, V
R
= 1800V,
dI
F
/dt = 1500A/
μ
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
rec
相關(guān)PDF資料
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參數(shù)描述
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