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參數(shù)資料
| 型號： | DIM500BSS06-S |
| 英文描述： | IGBT Modules - Single Switch |
| 中文描述： | IGBT模塊-單開關(guān) |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 145K |
| 代理商： | DIM500BSS06-S |
DIM500BSS06-S000
4/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Note:
Measured at the power busbars and not the auxiliary terminals.
L* is the circuit inductance + L
M
Test Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125C
V
GE
=
±
20V, V
CE
= 0V
I
C
= 20mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 375A
V
GE
= 15V, I
C
= 375A, , T
case
= 125C
DC
t
p
= 1ms
I
F
= 50A
I
F
= 500A, T
case
= 125C
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
-
Parameter
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
Input capacitance
Module inductance
Internal transistor resistance - per arm
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise.
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(sat)
I
F
I
FM
V
F
C
ies
L
M
R
INT
Units
mA
mA
μ
A
V
V
V
A
A
V
V
nF
nH
m
Max.
3
15
3
7.5
2.6
2.8
500
1000
1.8
1.8
-
-
Typ.
-
-
-
5.5
2.1
2.3
-
-
1.5
1.5
54
20
0.23
Min.
-
-
-
4.5
-
-
-
-
-
-
-
-
-
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