參數(shù)資料
型號(hào)： DL322
廠商： Spansion Inc.
英文描述： 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
中文描述： 32兆位（4個(gè)M × 8位/ 2米x 16位），3.0伏的CMOS只，同時(shí)作業(yè)快閃記憶體
文件頁數(shù)： 26/58頁
文件大小： 875K
代理商： DL322
24
Am29DL32xG
25686B10 December4,2006
D A T A S H E E T
Table 13.
Primary Vendor-Specific Extended Query
Note:
The number of sectors in Bank 2 is device dependent.
Am29DL322 = 38h, Am29DL323 = 30h, Am29DL324 = 20h
COMMAND DEFINITIONS
Writing specific address and data commands or se-
quences into the command register initiates device op-
erations. Table 14 defines the valid register command
sequences.
Writing incorrect address and data values
or writing them in the improper sequence may place
the device in an unknown state.
A reset command is
then required to return the device to reading array
data.
All addresses are latched on the falling edge of WE#
or CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens
first. Refer to the AC Characteristics section for timing
diagrams.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. Each bank is ready to read array data
after completing an Embedded Program or Embedded
Erase algorithm.
After the device accepts an Erase Suspend command,
the corresponding bank enters the erase-sus-
pend-read mode, after which the system can read
data from any non-erase-suspended sector within the
same bank. After completing a programming operation
in the Erase Suspend mode, the system may once
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
Description
40h
41h
42h
80h
82h
84h
0050h
0052h
0049h
Query-unique ASCII string “PRI”
43h
86h
0031h
Major version number, ASCII
44h
88h
0033h
Minor version number, ASCII
45h
8Ah
0004h
Address Sensitive Unlock (Bits 1-0)
0 = Required, 1 = Not Required
Silicon Revision Number (Bits 7-2)
46h
8Ch
0002h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h
8Eh
0001h
Sector Protect
0 = Not Supported, X = Number of sectors per group
48h
90h
0001h
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
49h
92h
0004h
Sector Protect/Unprotect scheme
04 = 29LV800 mode
4Ah
94h
00XXh
(See Note)
Simultaneous Operation
00 = Not Supported, X = Number of Sectors in Bank 2 (Uniform Bank)
4Bh
96h
0000h
Burst Mode Type
00 = Not Supported, 01 = Supported
4Ch
98h
0000h
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
4Dh
9Ah
0085h
ACC (Acceleration) Supply Minimum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
4Eh
9Ch
0095h
ACC (Acceleration) Supply Maximum
00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV
4Fh
9Eh
000Xh
Top/Bottom Boot Sector Flag
02h = Bottom Boot Device, 03h = Top Boot Device
相關(guān)PDF資料
PDF描述
DL323 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
DL324 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
DL4001 1 Amp Glass Passivated Rectifier 50 to 1000 Volts
DL4007 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
DL4001 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DL323 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2M x 16-Bit)
DL324 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2M x 16-Bit)
DL-3247-165 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:RED LASER DIODE
DL3-2-J/S 制造商:ITT Interconnect Solutions 功能描述:249-2060-001
DL33 制造商:Pentair Technical Products / Hoffman 功能描述:6.5mm Triangle Insert Latch Ki , fits DL Inst Box, Steel
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*